APPARATUS FOR DEPOSITION OF MATERIALS ON A SUBSTRATE

• US 20120270384A1
• Filed: 07/27/2011
• Published: 10/25/2012
• Est. Priority Date: 04/22/2011
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: SANCHEZ, ERROL ANTONIO C., CARLSON, DAVID K., BAUTISTA, KEVIN, DINIZ, HERMAN P., PATALAY, KAILASH, MYO, NYI O., MARCADAL, CHRISTOPHE, JUMPER, STEVE, KUPPURAO, SATHEESH, COLLINS, RICHARD O., DEMARS, DENNIS L.
• Application Number:
  US13/192,101
• Publication Number:
  US 20120270384A1
• Time in Patent Office: Days
• US Class Current: 438/503
• CPC Class Codes: C23C 16/0236 by etching with a reactive gas
• CPC Class Codes: C23C 16/301 AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45563 Gas nozzles
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4584 the substrate being rotated
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence

Abstract

Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.

Claims

1. An apparatus for processing a substrate, comprising:

a process chamber having a temperature-controlled reaction volume including interior surfaces comprising quartz and having a substrate support disposed within the temperature-controlled reaction volume to support a processing surface of a substrate;

a heating system disposed below the substrate support to provide heat energy to the substrate support;

an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate;

a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate; and

a heated exhaust manifold disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.

2. The apparatus of claim 1, wherein the substrate support further comprises:

a rotation mechanism to rotate the substrate support; and

a lift mechanism to position the substrate support relative to the showerhead and the injector.

3. The apparatus of claim 1, wherein the heating system further comprises:

a plurality of heating zones, wherein each one of the plurality of heating zones includes a plurality of lamps.

4. The apparatus of claim 1, wherein the temperature-controlled reaction volume may be at least partially formed by a plurality of chamber components including:

a chamber lid disposed above the substrate support;

an upper chamber liner disposed adjacent to the substrate support and above the injector and the exhaust manifold and below the chamber lid; and

a lower chamber liner disposed adjacent to the substrate support and below the injector and the exhaust manifold

5. The apparatus of claim 4, wherein the showerhead is either disposed in the chamber lid or disposed below the chamber lid.

6. The apparatus of claim 4, wherein the showerhead, the upper chamber liner, the lower chamber liner, the chamber lid, and the injector comprise quartz.

7. The apparatus of claim 1, wherein the injector further comprises:

a plurality of first injector ports to inject the first process gas; and

a plurality of second injector ports to inject the second process gas.

8. The apparatus of claim 7, wherein each of the plurality of second injector ports has a larger diameter than each of the plurality of first injector ports.

9. The apparatus of claim 7, wherein the pluralities of first and second injector ports are disposed in separate planes, wherein each plane is parallel to the processing surface of the substrate.

10. The apparatus of claim 7, wherein the plurality of first injector ports are disposed at a first distance from an edge of a substrate when positioned on the substrate support and the plurality of second injector ports are disposed at a second distance from the edge of the substrate when positioned on the substrate support, where the first distance is different from the second distance.

11. The apparatus of claim 7, wherein one of the plurality of first injector ports has a different diameter than another of the plurality of first injector ports and wherein one of the plurality of second injector ports has a different diameter than another of the plurality of second injector ports.

12. The apparatus of claim 1, wherein the showerhead further comprises:

a single outlet, wherein the single outlet is disposed in a position that is aligned with a center of the processing surface.

13. The apparatus of claim 1, wherein the showerhead further comprises:

.

a plurality of outlets, wherein the plurality of outlets are disposed in a position that is aligned with a desired area of the processing surface.

14. The apparatus of claim 1, wherein the heated exhaust manifold further comprises:

an adhesion reducing liner.

15. A method of depositing a layer on a substrate in a processing volume, comprising:

cleaning surfaces in the processing volume;

establishing a temperature within the processing volume prior to introducing a substrate into the processing volume;

flowing a first process gas into the processing volume and across a processing surface of the substrate;

separately flowing the first process gas into the processing volume and towards the processing surface from above the processing surface;

flowing a second process gas into the processing volume and across the processing surface; and

modulating the temperature of the processing surface of the substrate during formation of one or more layers on the processing surface from the first and second process gases.

16. The method of claim 15, wherein the first process gas comprises one or more Group III elements along with dopants and hydrogen chloride (HCl) in a first carrier gas, and wherein the second process gas comprises one or more Group V elements along with dopants and hydrogen chloride (HCl) in a second carrier gas.

17. The method of claim 15, wherein cleaning surfaces in the processing volume further comprises:

etching the surfaces with a halogen gas; and

purging the processing volume with an inert gas.

18. The method of claim 15, wherein the substrate temperature is modulated from about 5 degrees Celsius per second to about 20 degrees Celsius per second while depositing the one or more layers.

19. The method of claim 15, wherein the first process gas is flowed at a different velocity than the second process gas.

20. The method of claim 15, further comprising:

rotating the substrate and varying the position of the processing surface relative to the flow streams while depositing the one or more layers.