SILICON CARBIDE SEMICONDUCTOR DEVICE
First Claim
1. A silicon carbide semiconductor device having a vertical semiconductor element with a trench gate structure comprising:
- a silicon carbide semiconductor substrate including a first or second conductive type layer and a drift layer on the first or second conductive type layer, wherein the drift layer has the first conductive type, and the silicon carbide semiconductor substrate includes a principal surface having an offset direction;
a trench disposed on a surface of the drift layer and having a longitudinal direction; and
a gate electrode disposed in the trench via a gate insulation film,wherein a sidewall of the trench provides a channel formation surface,wherein the vertical semiconductor device is configured to flow current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode, andwherein the offset direction of the silicon carbide semiconductor substrate is perpendicular to the longitudinal direction of the trench.
1 Assignment
0 Petitions
Accused Products
Abstract
A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench.
-
Citations
7 Claims
-
1. A silicon carbide semiconductor device having a vertical semiconductor element with a trench gate structure comprising:
-
a silicon carbide semiconductor substrate including a first or second conductive type layer and a drift layer on the first or second conductive type layer, wherein the drift layer has the first conductive type, and the silicon carbide semiconductor substrate includes a principal surface having an offset direction; a trench disposed on a surface of the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film, wherein a sidewall of the trench provides a channel formation surface, wherein the vertical semiconductor device is configured to flow current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode, and wherein the offset direction of the silicon carbide semiconductor substrate is perpendicular to the longitudinal direction of the trench. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
Specification