SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
First Claim
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1. A method for fabricating a semiconductor device comprising:
- providing a substrate having an active region and a device isolation film;
forming an ion implantation region within the active region; and
etching the active region until the ion implantation region is at least partly etched to define a fin-shaped structure, the fin-shaped structure having a non-uniform upper surface that increases a channel length of a gate associated with the fin-shaped structure.
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Abstract
A semiconductor device and a method for fabricating the same are disclosed. A fin of the semiconductor device including a fin-shaped channel region is configured in the form of a non-uniform structure, and a leakage current caused by the electric field effect generated in the semiconductor device is prevented from being generated, resulting in an increased operation stability of the semiconductor device.
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Citations
17 Claims
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1. A method for fabricating a semiconductor device comprising:
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providing a substrate having an active region and a device isolation film; forming an ion implantation region within the active region; and etching the active region until the ion implantation region is at least partly etched to define a fin-shaped structure, the fin-shaped structure having a non-uniform upper surface that increases a channel length of a gate associated with the fin-shaped structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for forming a semiconductor device comprising:
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forming a device isolation film defining an active region over a semiconductor substrate; forming a hard mask pattern over the active region and the device isolation film; etching the active region using a first etch step to form a first recess in the active region using the hard mask pattern as an etch mask; and etching a lower part of the first recess using a second etch step, wherein a center section of a top surface of the fin-shaped active region is formed to be lower in height than an outer edge part of the top surface of the fin-shaped active region. - View Dependent Claims (11, 12, 13, 14)
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15. A semiconductor device, comprising:
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a substrate an active region and a device isolation film having an upper surface; a recess being provided in the active region and having a bottom surface that is at a higher level than the upper surface of the device isolation film, the bottom surface of the recess being non-uniform; and a gate structure formed over the non-uniform bottom surface of the recess. - View Dependent Claims (16, 17)
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Specification