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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

  • US 20120273850A1
  • Filed: 01/10/2012
  • Published: 11/01/2012
  • Est. Priority Date: 04/29/2011
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device comprising:

  • providing a substrate having an active region and a device isolation film;

    forming an ion implantation region within the active region; and

    etching the active region until the ion implantation region is at least partly etched to define a fin-shaped structure, the fin-shaped structure having a non-uniform upper surface that increases a channel length of a gate associated with the fin-shaped structure.

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