SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE DESIGN METHOD, SEMICONDUCTOR DESIGN APPARATUS, AND PROGRAM
First Claim
1. A semiconductor device comprising:
- a semiconductor chip, the semiconductor chip including;
a substrate;
a multilayer interconnect layer formed over the substrate;
an outer peripheral cell column disposed along an edge of the substrate in a plan view, the outer peripheral cell column having at least one first I/O cell;
an inner peripheral cell column formed at an inner peripheral side of the outer peripheral cell column, the inner peripheral cell column having at least one second I/O cell;
a potential supply cell provided in at least either the outer peripheral cell column or the inner peripheral cell column, the potential supply cell being either a power potential supply cell or a ground potential supply cell;
electrode pads formed in the uppermost interconnect layer of the multilayer interconnect layer, at least one of the electrode pads being provided in the first I/O cell, at least one of the electrode pads being provided in the potential supply cell, at least one of the electrode pads being provided in the second I/O cell;
a first potential supply interconnect provided in an interconnect layer below the uppermost interconnect layer, the first potential supply interconnect being extending in the same direction as the outer peripheral cell column, the first potential supply interconnect being connected to the first I/O cell;
a second potential supply interconnect provided in another or the interconnect layer below the uppermost interconnect layer, the second potential supply interconnect being extending in the same direction as the inner peripheral cell column, the second potential supply interconnect being located at an inner peripheral side of the first potential supply interconnect in a plan view, the second potential supply interconnect being connected to the second I/O cell; and
a potential-supply connection interconnect connecting the first potential supply interconnect and the second potential supply interconnect,wherein the potential supply cell directly connects to either one of the first potential supply interconnect or the second potential supply interconnect, and the potential supply cell connects through the one and the potential-supply connection interconnect to the other one of the first potential supply interconnect or the second potential supply interconnect.
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Accused Products
Abstract
A potential-supply connection interconnect is provided in a multilayer interconnect layer. The potential supply connection interconnect overlaps some cell of I/O cells in the outer peripheral cell column and some cell of I/O cells in the inner peripheral cell column in a plan view. The potential-supply connection interconnect connects a power potential supply interconnect located below the outer peripheral cell column to a power potential supply interconnect located below the inner peripheral cell column and also connects a ground potential supply interconnect located below the outer peripheral cell column to a ground potential supply interconnect located below the inner peripheral cell column.
9 Citations
14 Claims
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1. A semiconductor device comprising:
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a semiconductor chip, the semiconductor chip including; a substrate; a multilayer interconnect layer formed over the substrate; an outer peripheral cell column disposed along an edge of the substrate in a plan view, the outer peripheral cell column having at least one first I/O cell; an inner peripheral cell column formed at an inner peripheral side of the outer peripheral cell column, the inner peripheral cell column having at least one second I/O cell; a potential supply cell provided in at least either the outer peripheral cell column or the inner peripheral cell column, the potential supply cell being either a power potential supply cell or a ground potential supply cell; electrode pads formed in the uppermost interconnect layer of the multilayer interconnect layer, at least one of the electrode pads being provided in the first I/O cell, at least one of the electrode pads being provided in the potential supply cell, at least one of the electrode pads being provided in the second I/O cell; a first potential supply interconnect provided in an interconnect layer below the uppermost interconnect layer, the first potential supply interconnect being extending in the same direction as the outer peripheral cell column, the first potential supply interconnect being connected to the first I/O cell; a second potential supply interconnect provided in another or the interconnect layer below the uppermost interconnect layer, the second potential supply interconnect being extending in the same direction as the inner peripheral cell column, the second potential supply interconnect being located at an inner peripheral side of the first potential supply interconnect in a plan view, the second potential supply interconnect being connected to the second I/O cell; and a potential-supply connection interconnect connecting the first potential supply interconnect and the second potential supply interconnect, wherein the potential supply cell directly connects to either one of the first potential supply interconnect or the second potential supply interconnect, and the potential supply cell connects through the one and the potential-supply connection interconnect to the other one of the first potential supply interconnect or the second potential supply interconnect. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device design method for designing a semiconductor device using a computer, comprising:
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disposing an outer peripheral cell column including at least one first I/O cell along an edge of a substrate of the semiconductor device; disposing at least one inner peripheral cell column including at least one second I/O cell at an inner peripheral side of the outer peripheral cell column; disposing a potential supply cell in either the outer peripheral cell column or the inner peripheral cell column, the potential supply cell being either a power potential supply cell or a ground potential supply cell; disposing a first potential supply interconnect in an interconnect layer below the uppermost interconnect layer, the first potential supply interconnect being extending in the same direction as the outer peripheral cell column, the first potential supply interconnect being connected to the first I/O cell; disposing a second potential supply interconnect in another or the interconnect layer below the uppermost interconnect layer, the second potential supply interconnect being extending in the same direction as the inner peripheral cell column, the second potential supply interconnect being located at an inner peripheral side of the first potential supply interconnect in a plan view, the second potential supply interconnect being connected to the second I/O cell; connecting the potential supply cell to either the first potential supply interconnect or the second potential supply interconnect that overlaps the potential supply cell; and disposing a potential-supply connection interconnect connecting the first potential supply interconnect to the second potential supply interconnect.
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13. A semiconductor device design apparatus supporting design of a semiconductor device, comprising:
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a cell arrangement unit; disposing an outer peripheral cell column including at least one first I/O cell along an edge of a substrate of the semiconductor device; disposing at least one inner peripheral cell column including at least one second I/O cell at an inner peripheral side of the outer peripheral cell column; and disposing a potential supply cell in either the outer peripheral cell column or the inner peripheral cell column, the potential supply cell being either a power potential supply cell or a ground potential supply cell, a potential supply interconnect arrangement unit; disposing a first potential supply interconnect in an interconnect layer below the uppermost interconnect layer, the first potential supply interconnect being extending in the same direction as the outer peripheral cell column, the first potential supply interconnect being connected to the first I/O cell; disposing a second potential supply interconnect in another or the interconnect layer below the uppermost interconnect layer, the second potential supply interconnect being extending in the same direction as the inner peripheral cell column, the second potential supply interconnect being located at an inner peripheral side of the first potential supply interconnect in a plan view, the second potential supply interconnect being connected to the second I/O cell; and connecting the potential supply cell to either the first potential supply interconnect or the second potential supply interconnect that overlaps the potential supply cell, and a connection interconnect arrangement unit disposing a potential-supply connection interconnect connecting the first potential supply interconnect to the second potential supply interconnect.
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14. A program causing a computer to function as a semiconductor device design apparatus supporting design of a semiconductor device, the program causing the computer to have:
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a function of; disposing an outer peripheral cell column including at least one first I/O cell along an edge of a substrate of the semiconductor device; disposing at least one inner peripheral cell column including at least one second I/O cell at an inner peripheral side of the outer peripheral cell column; and disposing a potential supply cell in either the outer peripheral cell column or the inner peripheral cell column, the potential supply cell being either a power potential supply cell or a ground potential supply cell, a function of; disposing a first potential supply interconnect in an interconnect layer below the uppermost interconnect layer, the first potential supply interconnect being extending in the same direction as the outer peripheral cell column, the first potential supply interconnect being connected to the first I/O cell; disposing a second potential supply interconnect in another or the interconnect layer below the uppermost interconnect layer, the second potential supply interconnect being extending in the same direction as the inner peripheral cell column, the second potential supply interconnect being located at an inner peripheral side of the first potential supply interconnect in a plan view, the second potential supply interconnect being connected to the second I/O cell; and connecting the potential supply cell to either the first potential supply interconnect or the second potential supply interconnect that overlaps the potential supply cell, and a function of disposing a potential-supply connection interconnect connecting the first potential supply interconnect to the second potential supply interconnect.
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Specification