MOISTURE BARRIER COATINGS FOR ORGANIC LIGHT EMITTING DIODE DEVICES

• US 20120273976A1
• Filed: 07/10/2012
• Published: 11/01/2012
• Est. Priority Date: 02/21/2007
• Status: Abandoned Application

• Current Assignee: 3M Innovative Properties Company (3M Company)
• Original Assignee: 3M Innovative Properties Company (3M Company)
• Inventors: David, Moses M., McCormick, Fred B., Roehrig, Mark A.
• Application Number:
  US13/545,297
• Publication Number:
  US 20120273976A1
• Time in Patent Office: Days
• US Class Current: 257/790
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/844 Encapsulations

Abstract

A process for fabricating an amorphous diamond-like film layer for protection of a moisture or oxygen sensitive electronic device is described. The process includes forming a plasma from silicone oil, depositing an amorphous diamond-like film layer from the plasma, and

combining the amorphous diamond-like film layer with a moisture or oxygen sensitive electronic device to form a protected electronic device. Articles including the amorphous diamond-like film layer on an organic electronic device are also disclosed.

Claims

1. An article comprising;

an organic electronic device;

an amorphous diamond-like film layer adjacent to the organic electronic device,

wherein the amorphous diamond-like film layer comprises a siloxane moiety and

having a thickness of greater than 1000 Angstroms.

2. An article according to claim 1, wherein the amorphous diamond-like film encapsulates the organic electronic device.

3. An article according to claim 1, wherein the amorphous diamond-like film layer has a thickness in a range from 1000 to 10000 nanometers.

4. An article according to claim 1, wherein the organic electronic device comprises an organic light emitting diode, a photovoltaic article, or a thin-film transistor.

5. An article according to claim 1, further comprising a polymer or metallic layer disposed on the amorphous diamond-like film layer or between the amorphous diamond-like film layer and the organic electronic device.

6. An article according to claim 1, further comprising a polymer or metallic layer disposed on the amorphous diamond-like film layer, and a second polymer or metallic layer disposed between the organic electronic device and the amorphous diamond-like film layer.

7. An article according to claim 1, wherein the organic electronic device is a component of a display, signage, or lighting element of the article.

8. An article according to claim 1, wherein the organic electronic device is a component of a cell phone, MP3 player, PDA, television, DVD player, luminare, sign, billboard, or LCD.

9. A plasma deposition apparatus comprising;

a vacuum chamber comprising a powered electrode and an counter electrode;

a radio frequency power source in electrical connection with the powered electrode through an impedance matching network; and

a silicone oil source in fluid communication with the vacuum chamber.

10. An apparatus according to claim 9, further comprising a silane source in fluid communication with the vacuum chamber and a process gas source in fluid communication with the vacuum chamber.

11. An apparatus according to claim 10, wherein the silicone oil source comprises silicone oil disposed on a carbon cloth and a power source in electrical connection with the carbon cloth.

12. An apparatus according to claim 9, wherein the silicone oil source is disposed within the vacuum chamber.

13. An apparatus according to claim 12, wherein the silicone oil source is shielded with a Faraday cage.

14. An organic electronic device fabrication system comprising the plasma deposition apparatus according to claim 9.