Superjunction Structures for Power Devices and Methods of Manufacture
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Abstract
A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.
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Citations
163 Claims
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1-150. -150. (canceled)
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151. A method for forming pillars of alternating conductivity type in a power device, the method comprising:
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forming one or more N-type epitaxial layers over a substrate; forming P-type body regions in the one or more N-type epitaxial layers; forming gate electrodes extending adjacent to but being insulated from the one or more N-type epitaxial layers by a gate dielectric; after forming the P-type body regions and the gate electrodes, forming a plurality of deep trenches extending in the one or more N-type epitaxial layers; and filling the plurality of deep trenches with P-type silicon to form a plurality of P−
pillars, those portions of the one or more N-type epitaxial layers separating the plurality of P−
pillars forming N-pillars such that the P-pillars and the N-pillars form pillars of alternating conductivity type. - View Dependent Claims (152, 153, 154, 155, 156, 157, 158, 159, 160, 161, 162)
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163-171. -171. (canceled)
Specification