PROTECTION LAYER FOR PREVENTING LASER DAMAGE ON SEMICONDUCTOR DEVICES

• US 20120276732A1
• Filed: 07/12/2012
• Published: 11/01/2012
• Est. Priority Date: 07/21/2005
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Lin, Jian-Hong, Lin, Kang-Cheng, Lee, Tzu-Li
• Granted Patent: US 8,541,264 B2
• Time in Patent Office: Days
• US Class Current: 438/601
• CPC Class Codes: H01L 23/5258 the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
• CPC Class Codes: H01L 23/585 comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method for forming a semiconductor structure is provided to prevent energy that is used to blow at least one fuse formed on a metal layer above a semiconductor substrate from causing damage on the structure. The semiconductor structure includes a device, guard ring, protection ring, and at least one protection layer. The device is constructed on the semiconductor substrate underneath the fuse. A seal ring, which surrounds the fuse, is constructed on at least one metal layer between the device and the fuse for confining the energy therein. The protection layer is formed within the seal ring, on at least one metal layer between the device and the fuse for shielding the device from being directly exposed to the energy.

Claims

1. A method for forming a semiconductor structure for preventing energy that is used to blow at least one fuse formed on a metal layer above a semiconductor substrate from causing damage, the method comprising:

forming a fuse block containing a set of fuses;

forming a protection diode constructed on the semiconductor substrate and disposed directly beneath the fuse block, wherein the protection diode is electrically coupled to the set of fuses for dissipating the energy;

forming a guard ring surrounding the set of fuses, the guard ring being constructed on at least one metal layer between the protection diode and the set of fuses for confining the energy therein;

forming a protection ring structure vertically constructed within the guard ring, on one or more metal layers between the fuse and the device for enhancing a structural strength thereof, and

forming a protection layer disposed directly beneath the fuse block, the protection layer being comprised of a first metal layer having a dimension wider and longer than that of the fuse block to protect the protection diode and the semiconductor substrate disposed directly beneath the fuse block from being exposed to the energy, wherein the protection layer is electrically isolated from the set of fuses by at least one dielectric layer and is substantially in parallel with the semiconductor substrate.

2. The method as recited in claim 1, wherein the energy is in a form of a laser beam having a cross-sectional diameter larger than a width of the fuse.

3. The method as recited in claim 1, wherein the protection layer is continuously constructed on one metal layer.

4. The method as recited in claim 1, wherein the protection layer is discontinuously constructed on one metal layer.

5. The method as recited in claim 1, wherein the protection ring structure comprises one or more rings connected by one or more vias in one or more metal layers.

6. The method as recited in claim 1, wherein the protection layer is substantially made of copper.

7. The method as recited in claim 1, wherein the protection diode is a PN junction diode.

8. A method for forming a semiconductor structure for preventing a laser beam that is used to blow at least one fuse formed on a metal layer above a semiconductor substrate from causing damage, the method comprising:

forming a fuse block containing a set of fuses;

forming a protection diode constructed on the semiconductor substrate and disposed directly beneath the fuse block, wherein the protection diode is electrically coupled to the set of fuses for dissipating the energy;

forming a guard ring surrounding the set of fuses, the guard ring being constructed on at least one metal layer between the protection diode and the set of fuses for confining the energy therein;

forming a first protection layer disposed directly beneath the fuse block, the first protection layer being comprised of a first metal layer having a dimension wider and longer than that of the fuse block to protect the protection diode and the semiconductor substrate disposed directly beneath the fuse block from being exposed to the energy, wherein the first protection layer is electrically isolated from the set of fuses by at least one dielectric layer;

forming a protection ring structure vertically constructed within the guard ring, on one or more metal layers between the fuse and the device for enhancing a structural strength thereof; and

forming a second protection layer disposed directly beneath the fuse block and above the first protection layer, the second protection layer being comprised of a second metal layer having a dimension wider and longer than that of the first protection layer to protect the underlying semiconductor substrate and the protection diode from being exposed to the energy, wherein the second protection layer is electrically isolated from the set of fuses by at least one dielectric layer.

9. The method as recited in claim 8, wherein the first protection layer is continuously constructed on one metal layer.

10. The method as recited in claim 8, wherein the second protection layer is discontinuously constructed on another metal layer.

11. The method as recited in claim 8, wherein the protection ring structure comprises one or more rings connected by one or more vias in one or more metal layers

12. The method as recited in claim 8, wherein the first protection layer is substantially made of copper.

13. The method as recited in claim 8, wherein the protection diode is a PN junction diode.