OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING OXIDE SEMICONDUCTOR DEVICES AND DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES
First Claim
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1. An oxide semiconductor device, comprising:
- a gate electrode disposed on a substrate;
a gate insulation layer disposed on the gate electrode;
a channel protection structure disposed on the gate insulation layer and exposing a portion of the gate insulation layer;
a source electrode disposed on a first portion of the channel protection structure;
a drain electrode disposed on a second portion of the channel protection structure; and
an active pattern disposed on the exposed portion of the gate insulation layer, the source electrode, and the drain electrode.
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Abstract
An oxide semiconductor device may include a gate electrode formed on a substrate, and a gate insulation layer formed on the substrate to cover the gate electrode. A channel protection structure may be disposed on the gate insulation layer to expose a portion of the gate insulation layer. A source electrode may be located on a first portion of the channel protection structure. A drain electrode may be disposed on a second portion of the channel protection structure. An active pattern may be positioned on the exposed portion of the gate insulation layer, the source electrode, and the drain electrode.
14 Citations
20 Claims
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1. An oxide semiconductor device, comprising:
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a gate electrode disposed on a substrate; a gate insulation layer disposed on the gate electrode; a channel protection structure disposed on the gate insulation layer and exposing a portion of the gate insulation layer; a source electrode disposed on a first portion of the channel protection structure; a drain electrode disposed on a second portion of the channel protection structure; and an active pattern disposed on the exposed portion of the gate insulation layer, the source electrode, and the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of manufacturing an oxide semiconductor device, comprising:
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forming a gate electrode on a substrate; forming a gate insulation layer on the gate electrode; forming a channel protection structure on the gate insulation layer, the channel protection structure exposing a portion of the gate insulation layer; forming a source electrode on a first portion of the channel protection layer; forming a drain electrode on a second portion of the channel protection layer; and forming an active pattern on the exposed portion of the gate insulation layer, the source electrode, and the drain electrode. - View Dependent Claims (18, 19, 20)
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Specification