Three-Dimensional Semiconductor Memory Devices and Method of Fabricating the Same
First Claim
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1. A three-dimensional semiconductor memory device, comprising:
- an electrode structure extending in a first direction and including electrodes and insulating patterns which are alternately and repeatedly stacked on a substrate, at least an uppermost electrode of the electrodes being divided into a plurality of physically isolated segments arranged in the first direction;
vertical active patterns that penetrate the electrode structure; and
an electrode-dielectric layer disposed between each of the vertical active patterns and each of the electrodes,wherein the segments of the uppermost electrode are electrically connected to each other.
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Abstract
Provided are three-dimensional semiconductor memory devices and methods of fabricating the same. The device may include an electrode structure extending in a first direction and including electrodes and insulating patterns which are alternately and repeatedly stacked on a substrate, and vertical active patterns penetrating the electrode structure. At least an uppermost electrode of the electrodes is divided into a plurality of physically isolated segments arranged in the first direction. The segments of the uppermost electrode are electrically connected to each other.
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Citations
16 Claims
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1. A three-dimensional semiconductor memory device, comprising:
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an electrode structure extending in a first direction and including electrodes and insulating patterns which are alternately and repeatedly stacked on a substrate, at least an uppermost electrode of the electrodes being divided into a plurality of physically isolated segments arranged in the first direction; vertical active patterns that penetrate the electrode structure; and an electrode-dielectric layer disposed between each of the vertical active patterns and each of the electrodes, wherein the segments of the uppermost electrode are electrically connected to each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11-15. -15. (canceled)
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16. A three-dimensional semiconductor memory device, comprising:
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a substrate; an electrode structure on the substrate, the electrode structure including a plurality of electrode layers and a plurality of insulating pattern layers that are stacked in an alternating manner on the substrate in a vertical direction, wherein at least an uppermost electrode layer of the electrode structure is divided into first and second horizontal segments; a plurality of vertical active patterns that extend through the electrode structure in the vertical direction; and a plurality of dielectric layers between the vertical active patterns and respective ones of the electrode layers; wherein the first and second horizontal segments of the uppermost electrode are electrically connected to each other.
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Specification