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Three-Dimensional Semiconductor Memory Devices and Method of Fabricating the Same

  • US 20120280299A1
  • Filed: 03/08/2012
  • Published: 11/08/2012
  • Est. Priority Date: 05/04/2011
  • Status: Active Grant
First Claim
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1. A three-dimensional semiconductor memory device, comprising:

  • an electrode structure extending in a first direction and including electrodes and insulating patterns which are alternately and repeatedly stacked on a substrate, at least an uppermost electrode of the electrodes being divided into a plurality of physically isolated segments arranged in the first direction;

    vertical active patterns that penetrate the electrode structure; and

    an electrode-dielectric layer disposed between each of the vertical active patterns and each of the electrodes,wherein the segments of the uppermost electrode are electrically connected to each other.

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