THIN FILM TRANSISTOR, DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A method for manufacturing a display device, comprising the steps of:
- forming a gate electrode over a first substrate;
forming a gate insulating film over the gate electrode;
forming a semiconductor film over the gate insulating film;
forming a source electrode and a drain electrode over the semiconductor film; and
discharging a material of a color filter by a droplet discharge method over the gate insulating film after forming the source electrode and the drain electrode.
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Accused Products
Abstract
As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole.
18 Citations
30 Claims
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1. A method for manufacturing a display device, comprising the steps of:
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forming a gate electrode over a first substrate; forming a gate insulating film over the gate electrode; forming a semiconductor film over the gate insulating film; forming a source electrode and a drain electrode over the semiconductor film; and discharging a material of a color filter by a droplet discharge method over the gate insulating film after forming the source electrode and the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a display device, comprising the steps of:
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forming a gate electrode over a first substrate; forming a gate insulating film over the gate electrode; forming a semiconductor film over the gate insulating film; forming a source electrode and a drain electrode over the semiconductor film; and discharging a material of a black matrix by a droplet discharge method over the source electrode and the drain electrode. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for manufacturing a display device, comprising the steps of:
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forming a gate electrode over a first substrate; forming a gate insulating film over the gate electrode; forming a semiconductor film over the gate insulating film; forming a source electrode and a drain electrode over the semiconductor film; forming a color filter over the gate insulating film after forming the source electrode and the drain electrode; and discharging a material of a black matrix by a droplet discharge method over the source electrode and the drain electrode. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification
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- Resources
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYAMAZAKI, Shunpei, Maekawa, Shinji, Kanno, Yohei
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current438/29
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