SEMICONDUCTOR LIGHT EMITTING STRUCTURE
First Claim
1. A semiconductor light emitting structure, comprising:
- a substrate having a luminous zone and a non-luminous zone;
a second type electrode layer formed on the substrate, wherein a current spreading grating formed by a plurality of conductive pillars and a plurality of conductive walls, which are staggered and connected to each other, is formed within the luminous zone, and each conductive pillar and each conductive wall respectively have a first top surface and a second top surface parallel to the substrate;
a reflecting layer and an insulating layer formed on the second type electrode layer in sequence, wherein the reflecting layer and the insulating layer cover the conductive pillars and the conductive walls, and the first and the second top surface are exposed;
a first type electrode layer, a first type semiconductor layer, an active layer formed on the insulating layer located within the luminous zone in sequence;
a second type semiconductor layer formed on the active layer, wherein the second type semiconductor layer covers the conductive pillars and the conductive walls; and
a first contact pad formed on the first type electrode located within the non-luminous zone.
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Abstract
A semiconductor light emitting structure including a substrate, a second type electrode layer, a reflecting layer, an insulating layer, a first type electrode layer, a first type semiconductor layer, an active layer and a second type semiconductor layer is provided. The second type electrode layer formed on the substrate has a current spreading grating formed by several conductive pillars and conductive walls, which are staggered and connected to each other. The reflecting layer and the insulating layer are formed on the second type electrode layer in sequence, and cover each conductive pillar and each conductive wall. The first type electrode layer, the first type semiconductor layer and the active layer are formed on the insulating layer in sequence. The second type semiconductor layer is formed on the active layer, and covers each conductive pillar and each conductive wall.
10 Citations
10 Claims
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1. A semiconductor light emitting structure, comprising:
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a substrate having a luminous zone and a non-luminous zone; a second type electrode layer formed on the substrate, wherein a current spreading grating formed by a plurality of conductive pillars and a plurality of conductive walls, which are staggered and connected to each other, is formed within the luminous zone, and each conductive pillar and each conductive wall respectively have a first top surface and a second top surface parallel to the substrate; a reflecting layer and an insulating layer formed on the second type electrode layer in sequence, wherein the reflecting layer and the insulating layer cover the conductive pillars and the conductive walls, and the first and the second top surface are exposed; a first type electrode layer, a first type semiconductor layer, an active layer formed on the insulating layer located within the luminous zone in sequence; a second type semiconductor layer formed on the active layer, wherein the second type semiconductor layer covers the conductive pillars and the conductive walls; and a first contact pad formed on the first type electrode located within the non-luminous zone. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification
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- Resources
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Current AssigneeLextar Electronics Corporation
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Original AssigneeLextar Electronics Corporation
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InventorsFang, Kuo-Lung, Lee, Chia-En, Ye, Chao-Chen
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/98
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CPC Class CodesH01L 33/382 the electrode extending par...H01L 33/387 with a plurality of electro...H01L 33/405 Reflective materialsH01L 33/46 Reflective coating, e.g. di...H01L 33/647 the elements conducting ele...
