Semiconductor Device and Method of Forming Dummy Pillars Between Semiconductor Die and Substrate for Maintaining Standoff Distance
First Claim
1. A method of making a semiconductor device, comprising:
- providing a semiconductor die;
forming a first insulation layer over an active surface of the semiconductor die;
forming a conductive layer over the first insulating layer electrically connected to the active surface of the semiconductor die;
forming a plurality of conductive pillars over the conductive layer;
forming a plurality of dummy pillars over the first insulating layer electrically isolated from the conductive layer and conductive pillars;
providing a substrate; and
mounting the semiconductor die to the substrate with the dummy pillars maintaining a standoff distance between the semiconductor die and substrate.
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Accused Products
Abstract
A semiconductor device has a semiconductor die with an insulation layer formed over an active surface of the semiconductor die. A conductive layer is formed over the first insulating layer electrically connected to the active surface. A plurality of conductive pillars is formed over the conductive layer. A plurality of dummy pillars is formed over the first insulating layer electrically isolated from the conductive layer and conductive pillars. The semiconductor die is mounted to a substrate. A height of the dummy pillars is greater than a height of the conductive pillars to maintain the standoff distance between the semiconductor die and substrate. The dummy pillars can be formed over the substrate. The dummy pillars are disposed at corners of the semiconductor die and a central region of the semiconductor die. A mold underfill material is deposited between the semiconductor die and substrate.
61 Citations
25 Claims
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1. A method of making a semiconductor device, comprising:
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providing a semiconductor die; forming a first insulation layer over an active surface of the semiconductor die; forming a conductive layer over the first insulating layer electrically connected to the active surface of the semiconductor die; forming a plurality of conductive pillars over the conductive layer; forming a plurality of dummy pillars over the first insulating layer electrically isolated from the conductive layer and conductive pillars; providing a substrate; and mounting the semiconductor die to the substrate with the dummy pillars maintaining a standoff distance between the semiconductor die and substrate. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of making a semiconductor device, comprising:
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providing a semiconductor die; providing a substrate; forming a first insulation layer over the semiconductor die; forming a conductive layer over the first insulating layer; forming a plurality of conductive pillars over the conductive layer; forming a plurality of dummy pillars over the substrate or first insulating layer; and mounting the semiconductor die to the substrate with the dummy pillars maintaining a standoff distance between the semiconductor die and substrate. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method of making a semiconductor device, comprising:
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providing a semiconductor die; forming a first insulation layer over the semiconductor die; forming a conductive layer over the first insulating layer; forming a plurality of conductive pillars over the conductive layer; and forming a plurality of dummy pillars over the first insulating layer electrically isolated from the first conductive layer and conductive pillars. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21. A semiconductor device, comprising:
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a semiconductor die; a substrate; a first insulation layer formed over the semiconductor die; a conductive layer formed over the first insulating layer; a plurality of conductive pillars formed over the conductive layer; and a plurality of dummy pillars formed over the substrate or first insulating layer, the semiconductor die being mounted to the substrate with the dummy pillars maintaining a standoff distance between the semiconductor die and substrate. - View Dependent Claims (22, 23, 24, 25)
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Specification