SEMICONDUCTOR DEVICE AND MEMORY DEVICE INCLUDING SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a holding circuit comprising a first transistor and a capacitor electrically connected to the first transistor;
a comparison circuit comprising a first arithmetic circuit and a second arithmetic circuit electrically connected to the first arithmetic circuit; and
a switching element,wherein the first transistor includes a first oxide semiconductor layer,wherein the holding circuit is electrically connected to the first arithmetic circuit and the second arithmetic circuit,wherein the switching element is electrically connected to the first arithmetic circuit and the second arithmetic circuit, andwherein the first arithmetic circuit and the second arithmetic circuit are configured to change a potential of a output signal line electrically connected to the switching element.
1 Assignment
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Accused Products
Abstract
To provide a semiconductor device whose power can be turned off without the need for a peripheral circuit for data to escape temporarily and in which stored data is not lost even in an off state of the power of the device, and a memory device including the semiconductor device. In a holding circuit of the semiconductor device, a transistor that includes a semiconductor layer (at least a channel formation region) including an oxide semiconductor material with which small off-state current can be achieved is used. Further, the semiconductor device includes a switching element which enables a comparison circuit in which comparison between data stored in the holding circuit and reference data input from the outside does not need to be performed to become forcibly inactive.
10 Citations
21 Claims
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1. A semiconductor device comprising:
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a holding circuit comprising a first transistor and a capacitor electrically connected to the first transistor; a comparison circuit comprising a first arithmetic circuit and a second arithmetic circuit electrically connected to the first arithmetic circuit; and a switching element, wherein the first transistor includes a first oxide semiconductor layer, wherein the holding circuit is electrically connected to the first arithmetic circuit and the second arithmetic circuit, wherein the switching element is electrically connected to the first arithmetic circuit and the second arithmetic circuit, and wherein the first arithmetic circuit and the second arithmetic circuit are configured to change a potential of a output signal line electrically connected to the switching element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a holding circuit comprising a first transistor and a capacitor electrically connected to the first transistor, wherein storage data is input to the capacitor; a comparison circuit comprising a first arithmetic circuit and a second arithmetic circuit electrically connected to the first arithmetic circuit, wherein reference data is input to each of the first arithmetic circuit and the second arithmetic circuit so that the first arithmetic circuit and the second arithmetic circuit each compares the storage data with the reference data; and a switching element, wherein the first transistor includes a first oxide semiconductor layer, wherein the holding circuit is electrically connected to the first arithmetic circuit and the second arithmetic circuit, wherein the switching element is electrically connected to the first arithmetic circuit and the second arithmetic circuit, and wherein the first arithmetic circuit and the second arithmetic circuit is configured to change a potential of a output signal line electrically connected to the switching element when at least one of the first arithmetic circuit and the second arithmetic circuit and the switching element are in a conductive state. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification