SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an oxide semiconductor layer over an oxide insulating layer, andselectively removing the oxide semiconductor layer by dry etching using a gas containing chlorine so that part of the oxide insulating layer is exposed,wherein the oxide semiconductor layer comprises In, Sn, and Zn.
1 Assignment
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Accused Products
Abstract
To establish a processing technique in manufacture of a semiconductor device including an In—Sn—Zn—O-based semiconductor. An In—Sn—Zn—O-based semiconductor layer is selectively etched by dry etching with the use of a gas containing chlorine such as Cl2, BCl3, SiCl4, or the like. In formation of a source electrode layer and a drain electrode layer, a conductive layer on and in contact with the In—Sn—Zn—O-based semiconductor layer can be selectively etched with little removal of the In—Sn—Zn—O-based semiconductor layer with the use of a gas containing oxygen or fluorine in addition to a gas containing chlorine.
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Citations
15 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer over an oxide insulating layer, and selectively removing the oxide semiconductor layer by dry etching using a gas containing chlorine so that part of the oxide insulating layer is exposed, wherein the oxide semiconductor layer comprises In, Sn, and Zn. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer over an oxide insulating layer; selectively removing the oxide semiconductor layer by dry etching using a gas containing chlorine so that part of the oxide insulating layer is exposed; forming a conductive layer over the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer by processing the conductive layer; forming a gate insulating layer over the source electrode layer and the drain electrode layer; and forming a gate electrode over the gate insulating layer, and wherein the oxide semiconductor layer comprises In, Sn, and Zn. - View Dependent Claims (6, 7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer over an oxide insulating layer; selectively removing the oxide semiconductor layer by a first dry etching with the use of a gas containing chlorine so that part of the oxide insulating layer is exposed; forming a conductive layer over the oxide semiconductor layer; processing the conductive layer by a second dry etching with the use of a gas containing fluorine, oxygen, and chlorine so that a source electrode layer and a drain electrode layer are formed; forming a gate insulating layer over the source electrode layer and the drain electrode layer; and forming a gate electrode over the gate insulating layer, and wherein the oxide semiconductor layer comprises In, Sn, and Zn. - View Dependent Claims (12, 13, 14, 15)
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Specification