Semiconductor Wafer Bonding Incorporating Electrical and Optical Interconnects
First Claim
1. A method for the bonding of semiconductor wafers comprising:
- forming bonding surfaces of the wafers for the transfer of electric and optical signals between the bonded wafers by;
forming a dielectric intermediary bonding layer on a surface of each wafer, within which surface is embedded both optical and electrical interconnects for the transfer of light and electrical signals;
respectively;
interfusing the optical interconnects, the electrical interconnects and the dielectric intermediary bonding layer on the wafers to bond the wafers together with electrical interconnections and optical interconnections between the wafers.
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Accused Products
Abstract
Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface. The methods incorporate the formation of both electrical and optical interconnect vias within the wafer bonding interface to transfer electrical and optical signals between the bonded wafers. The electrical vias are formed across the bonding surface using multiplicity of metal posts that are interfused across the bonding surface. The optical vias are formed across the bonding surface using multiplicity of optical waveguides each comprised of a dielectric material that interfuses across the bonding interface and having an index of refraction that is higher than the index of refraction of the dielectric intermediary bonding layer between the bonded wafers. The electrical and optical vias are interspersed across the bonding surface between the bonded wafers to enable uniform transfer of both electrical and optical signals between the bonded wafers.
81 Citations
67 Claims
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1. A method for the bonding of semiconductor wafers comprising:
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forming bonding surfaces of the wafers for the transfer of electric and optical signals between the bonded wafers by; forming a dielectric intermediary bonding layer on a surface of each wafer, within which surface is embedded both optical and electrical interconnects for the transfer of light and electrical signals;
respectively;interfusing the optical interconnects, the electrical interconnects and the dielectric intermediary bonding layer on the wafers to bond the wafers together with electrical interconnections and optical interconnections between the wafers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55)
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56. A method for the bonding of silicon semiconductor wafers patterned to delineate multiple arrays, each forming a device die and each comprising a multiplicity of elements comprising:
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forming a dielectric intermediary bonding layer on a surface of each wafer within which surface is embedded electrical interconnects for the transfer of electrical signals; providing alignment marks on each of the wafers for enabling accurate alignment with respect to the arrays; depositing the dielectric intermediary bonding layer on each of the wafers; selectively forming the electrical interconnects in the dielectric intermediary bonding layers substantially aligned with the arrays; planarizing and cleaning the bonding surfaces of the wafers before interfusing the and the electrical interconnects on the wafers; interfusing the electrical interconnects and the dielectric intermediary bonding layer on the wafers to bond the wafers together with electrical interconnections between the wafers; post-bonding anneal using localized rapid thermal scanning to further strengthen the interfusion of the dielectric intermediary bonding layers and the electrical interconnects on the opposing bonding surfaces of the two wafers, whereby the dielectric intermediary bonding layers interfusion and the electrical interconnects interfusion are enhanced. - View Dependent Claims (57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67)
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Specification