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Semiconductor Wafer Bonding Incorporating Electrical and Optical Interconnects

  • US 20120288995A1
  • Filed: 05/03/2012
  • Published: 11/15/2012
  • Est. Priority Date: 05/10/2011
  • Status: Active Grant
First Claim
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1. A method for the bonding of semiconductor wafers comprising:

  • forming bonding surfaces of the wafers for the transfer of electric and optical signals between the bonded wafers by;

    forming a dielectric intermediary bonding layer on a surface of each wafer, within which surface is embedded both optical and electrical interconnects for the transfer of light and electrical signals;

    respectively;

    interfusing the optical interconnects, the electrical interconnects and the dielectric intermediary bonding layer on the wafers to bond the wafers together with electrical interconnections and optical interconnections between the wafers.

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