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SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20120292615A1
  • Filed: 05/15/2012
  • Published: 11/22/2012
  • Est. Priority Date: 05/19/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first conductive layer;

    a second conductive layer;

    a first insulating layer in contact with a side surface of the first conductive layer and a side surface of the second conductive layer;

    a third conductive layer between the first conductive layer and the second conductive layer with the first insulating layer interposed between the third conductive layer and each of the first conductive layer and the second conductive layer;

    a second insulating layer over the third conductive layer;

    an oxide semiconductor layer over the first conductive layer, the second conductive layer, and the second insulating layer, wherein the oxide semiconductor layer is electrically connected to the first conductive layer and the second conductive layer;

    a third insulating layer over the oxide semiconductor layer; and

    a fourth conductive layer over the third conductive layer with the second insulating layer, the oxide semiconductor layer, and the third insulating layer interposed therebetween,wherein the second insulating layer is provided between the first conductive layer and the second conductive layer with the first insulating layer interposed between the second insulating layer and each of the first conductive layer and the second conductive layer.

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