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FABRICATION OF TRENCH DMOS DEVICE HAVING THICK BOTTOM SHIELDING OXIDE

  • US 20120292693A1
  • Filed: 07/27/2012
  • Published: 11/22/2012
  • Est. Priority Date: 08/31/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor layer;

    a trench formed in the semiconductor layer;

    a conductive structure formed in the trench, the conductive structure having a top portion and a bottom portion electrically insulated from semiconductor layer by a first insulating layer and a second insulating layer respectively, wherein the top portion is wider than the bottom portion and wherein a thickness of the second insulating layer proximate sidewalls of the trench is T1 and a thickness of the second insulating layer proximate a bottom of the trench is T2 that is different from T1.

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