Extremely Thin Semiconductor-On-Insulator (ETSOI) FET With A Back Gate and Reduced Parasitic Capacitance And Method of Forming The Same
First Claim
1. An extremely thin semiconductor-on-insulator (ETSOI) device comprising:
- a. a back gate layer on a substrate superimposed by a thin BOX layer;
b. an extremely thin SOI layer on top of said thin BOX layer; and
c. an FET device on said extremely thin (ET) SOI layer having a gate stack insulated by spacers.
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Accused Products
Abstract
An extremely thin SOI MOSFET device on an SOI substrate is provided with a back gate layer on a Si substrate superimposed by a thin BOX layer; an extremely thin SOI layer (ETSOI) on top of the thin BOX layer; and an FET device on the ETSOI layer having a gate stack insulated by spacers. The thin BOX is formed under the ETSOI channel, and is provided with a thicker dielectric under source and drain to reduce the source/drain to back gate parasitic capacitance. The thicker dielectric portion is self-aligned with the gate. A void within the thicker dielectric portion is formed under the source/drain region. The back gate is determined by a region of semiconductor damaged by implantation, and the formation of an insulating layer by lateral etch and back filling with dielectric.
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Citations
25 Claims
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1. An extremely thin semiconductor-on-insulator (ETSOI) device comprising:
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a. a back gate layer on a substrate superimposed by a thin BOX layer; b. an extremely thin SOI layer on top of said thin BOX layer; and c. an FET device on said extremely thin (ET) SOI layer having a gate stack insulated by spacers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of manufacturing an extremely thin SOI (ETSOI) device comprising:
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a. providing a back gate layer on a Si substrate superimposed by a thin BOX layer; b. forming said extremely thin SOI layer on top of said thin BOX layer; and c. forming an FET device on said ETSOI layer, said FET having a gate stack insulated by spacers. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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Specification