METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an insulating film, an aluminum oxide film, and an amorphous oxide semiconductor film between the insulating film and the aluminum oxide film; and
performing heat treatment on the amorphous oxide semiconductor film to form an oxide semiconductor film including a crystal,wherein the amorphous oxide semiconductor film has a region containing oxygen in excess of a stoichiometric ratio in the oxide semiconductor in a crystalline state as a result of adding oxygen thereto.
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Accused Products
Abstract
Stable electrical characteristics and high reliability are provided to a semiconductor device including an oxide semiconductor. In a process of manufacturing a transistor including an oxide semiconductor film, an amorphous oxide semiconductor film is formed, and oxygen is added to the amorphous oxide semiconductor film, so that an amorphous oxide semiconductor film containing excess oxygen is formed. Then, an aluminum oxide film is formed over the amorphous oxide semiconductor film, and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that a crystalline oxide semiconductor film is formed.
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Citations
9 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an insulating film, an aluminum oxide film, and an amorphous oxide semiconductor film between the insulating film and the aluminum oxide film; and performing heat treatment on the amorphous oxide semiconductor film to form an oxide semiconductor film including a crystal, wherein the amorphous oxide semiconductor film has a region containing oxygen in excess of a stoichiometric ratio in the oxide semiconductor in a crystalline state as a result of adding oxygen thereto. - View Dependent Claims (4, 5, 6, 7, 8, 9)
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2. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an insulating film; forming an amorphous oxide semiconductor film over the insulating film; adding oxygen to the amorphous oxide semiconductor film; forming an aluminum oxide film over the amorphous oxide semiconductor film containing added oxygen; and performing heat treatment on the amorphous oxide semiconductor film containing added oxygen to form an oxide semiconductor film including a crystal, wherein the amorphous oxide semiconductor film has a region containing oxygen in excess of a stoichiometric ratio in the oxide semiconductor in a crystalline state.
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3. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an insulating film; forming an amorphous oxide semiconductor film over the insulating film; forming an aluminum oxide film over the amorphous oxide semiconductor film; adding oxygen to the amorphous oxide semiconductor film through the aluminum oxide film; and performing heat treatment on the amorphous oxide semiconductor film containing added oxygen to form an oxide semiconductor film including a crystal, wherein the amorphous oxide semiconductor film has a region containing oxygen in excess of a stoichiometric ratio in the oxide semiconductor in a crystalline state.
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Specification