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High-Gain Complementary Inverter with Ambipolar Thin Film Transistors and Fabrication Thereof

  • US 20120298982A1
  • Filed: 08/01/2011
  • Published: 11/29/2012
  • Est. Priority Date: 05/27/2011
  • Status: Active Grant
First Claim
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1. An ambipolar thin film transistor, comprising:

  • a gate layer, wherein material of the gate layer is low-resistivity Si or metal conductor;

    a silica layer, forming on the gate layer;

    an active layer, forming on the silica layer, wherein the active layer is formed by stacking up a n-type semiconductor thin film and a p-type semiconductor thin film;

    a source, forming on the gate layer and connecting to one side of the active layer; and

    a drain, forming on the gate layer, connecting to another side of the active layer and corresponding to the source.

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