SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING CURRENT BLOCKING LAYER

• US 20120299048A1
• Filed: 05/25/2012
• Published: 11/29/2012
• Est. Priority Date: 05/27/2011
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: LEE, Wan Ho
• Granted Patent: US 8,785,962 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer

Abstract

There is provided a semiconductor light emitting device including: a semiconductor light emitting laminate including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed therebetween; a first electrode having at least one bonding pad formed on a portion of an upper surface of the first conductive semiconductor layer; a second electrode having an ohmic contact layer formed on the second conductive semiconductor layer; and a current blocking layer between the second conductive semiconductor layer and the ohmic contact layer having a plurality of patterns formed thereon, the plurality of patterns being arrayed such that intervals between patterns adjacent to a region overlapped with the bonding pad are smaller an interval between patterns of another regions.

Claims

1. A semiconductor light emitting device comprising:

a semiconductor light emitting laminate including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed therebetween;

a first electrode having at least one bonding pad formed on a portion of an upper surface of the first conductive semiconductor layer;

a second electrode having an ohmic contact layer formed on the second conductive semiconductor layer; and

a current blocking layer between the second conductive semiconductor layer and the ohmic contact layer having a plurality of patterns formed thereon, the plurality of patterns being arrayed such that intervals between patterns adjacent to a region overlapped with the bonding pad are smaller than an interval between patterns of another regions.

2. The semiconductor light emitting device of claim 1, wherein the first electrode is formed on the first conductive semiconductor layer and further includes a plurality of electrode branches extended from the bonding pad.

3. The semiconductor light emitting device of claim 2, wherein the plurality of electrode branches are arrayed in parallel in a direction in which the plurality of patterns are arrayed.

4. The semiconductor light emitting device of claim 3, wherein intervals between the plurality of patterns are larger in a direction away from the region overlapped with the bonding pad.

5. The semiconductor light emitting device of claim 3, wherein the plurality of electrode branches are arrayed to have a predetermined interval therebetween.

6. The semiconductor light emitting device of claims 3, wherein the plurality of patterns are formed to be disposed on a region overlapped with the plurality of electrode branches.

7. The semiconductor light emitting device of claim 1, wherein the at least one bonding pad is a plurality of bonding pads formed on different regions of the upper surface of the first conductive semiconductor layer.

8. The semiconductor light emitting device of claim 7, wherein the plurality of bonding pads are respectively disposed on opposing corners, and the intervals between the plurality of patterns become larger toward a region overlapped with the center of the first conductive semiconductor layer.

9. The semiconductor light emitting device of claim 1, wherein among the plurality of patterns, a width of a pattern adjacent to the region overlapped with the bonding pad is larger than that of another pattern.

10. The semiconductor light emitting device of claim 9, wherein widths of the plurality of patterns are smaller away from the region overlapped with the bonding pad.

11. The semiconductor light emitting device of claim 1, wherein the current blocking layer is formed of an electrically insulating material.

12. The semiconductor light emitting device of claim 1, wherein the current blocking layer is formed of a region in which damaged crystals of the second conductive semiconductor layer are formed so as to have a short key junction with the ohmic contact layer.

13. The semiconductor light emitting device of claim 1, further comprising a conductive substrate provided with the second electrode in order to support the semiconductor light emitting laminate.

14. The semiconductor light emitting device of claim 13, wherein the second electrode further includes a barrier layer disposed between the ohmic contact layer and the conductive substrate.

15. The semiconductor light emitting device of claim 1, wherein the first electrode further includes a transparent electrode layer formed on the first conductive semiconductor layer, and the bonding pad is formed on the transparent electrode layer.

16. The semiconductor light emitting device of claim 15, further comprising an additive current blocking layer having a plurality of additional patterns formed between the first conductive semiconductor layer and the transparent electrode layer.

17. The semiconductor light emitting device of claim 16, wherein the plurality of additional patterns are arrayed such that an interval between patterns adjacent to the region overlapped with the bonding pad is smaller than an interval between patterns of another region.

18. The semiconductor light emitting device of claim 17, wherein the plurality of additional patterns are formed on a position not overlapped with the plurality of patterns.

19. A semiconductor light emitting device comprising:

a semiconductor light emitting laminate including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed therebetween;

a first electrode having a transparent electrode layer formed on an upper surface of the first conductive semiconductor layer, and at least one bonding pad formed on a portion of the transparent electrode layer;

a second electrode having an ohmic contact layer formed on the second conductive semiconductor layer; and

a current blocking layer formed between the first conductive semiconductor layer and the transparent electrode layer having a plurality of patterns formed thereon, the plurality of patterns being arrayed such that intervals between patterns adjacent to a region overlapped with the bonding pad are smaller than an interval between patterns of another region.

20. The semiconductor light emitting device of claim 19, wherein intervals between the plurality of patterns are larger in a direction away from the region overlapped with the bonding pad.

21. The semiconductor light emitting device of claim 20, wherein the at least one bonding pad is a plurality of bonding pads formed on different regions of the upper surface of the transparent electrode layer.

22. The semiconductor light emitting device of claim 21, wherein the plurality of bonding pads are respectively disposed on opposing corners, and the intervals between the plurality of patterns become larger toward the center of the first conductive semiconductor layer.

23. The semiconductor light emitting device of claim 19, wherein among the plurality of patterns, a width of a pattern adjacent to the region overlapped with the bonding pad is larger than that of another pattern.

24. The semiconductor light emitting device of claim 23, wherein widths of the plurality of patterns are smaller away from the region overlapped with the bonding pad.

25. The semiconductor light emitting device of claim 19, wherein the current blocking layer is formed of an electrically insulating material.

26. The semiconductor light emitting device of claim 19, further comprising a conductive substrate provided with the second electrode in order to support the semiconductor light emitting laminate.

27. The semiconductor light emitting device of claim 26, wherein the second electrode further includes a barrier layer disposed between the ohmic contact layer and the conductive substrate.