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NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

  • US 20120299076A1
  • Filed: 11/25/2011
  • Published: 11/29/2012
  • Est. Priority Date: 05/26/2011
  • Status: Active Grant
First Claim
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1. A nonvolatile memory device comprising:

  • a channel vertically extending from a substrate, wherein the channel comprises a first region that is doped with first impurities and a second region that is disposed under the first region;

    a plurality of memory cells and a selection transistor stacked over the substrate along the channel; and

    a diffusion barrier interposed between the first region and the second region,wherein a density of the first impurities is higher than a density of impurities of the second region.

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