SEMICONDUCTOR COMPONENT ARRANGEMENT AND METHOD FOR PRODUCING THEREOF
First Claim
1. A semiconductor component arrangement comprising at least one power semiconductor component and at least one logic component integrated in a semiconductor body having a first side, the logic component comprising:
- a trench extending into the semiconductor body proceeding from the first side;
at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric;
a first source zone and a first drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which a first body zone of a second conduction type is arranged; and
at least a second source zone and at least a second drain zone that are separated from each other by a second body zone and formed along the trench.
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Accused Products
Abstract
A semiconductor component arrangement and method for producing thereof is disclosed. One embodiment provides at least one power semiconductor component integrated in a semiconductor body and at least one logic component integrated in the semiconductor body. The logic component includes a trench extending into the semiconductor body proceeding from a first side, at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric, and at least one source zone and at least one drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which at least one body zone of a second conduction type is arranged.
11 Citations
16 Claims
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1. A semiconductor component arrangement comprising at least one power semiconductor component and at least one logic component integrated in a semiconductor body having a first side, the logic component comprising:
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a trench extending into the semiconductor body proceeding from the first side; at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric; a first source zone and a first drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which a first body zone of a second conduction type is arranged; and at least a second source zone and at least a second drain zone that are separated from each other by a second body zone and formed along the trench. - View Dependent Claims (2, 3, 4)
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5. A method for producing a semiconductor component arrangement comprising:
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providing a semiconductor body having a first side and a second side and having a doped zone of a first conduction type; producing at least one trench in the doped zone proceeding from the first side; producing at least one drain zone and at least one source zone in such a way that they are arranged in the doped zone around the trench and in a manner adjoining the trench and are separated from one another by a body zone; producing a dielectric layer in the trench; and producing at least one gate electrode in the trench, the at least one gate electrode being arranged adjacent to the at least one body. - View Dependent Claims (6, 7)
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8. A semiconductor component arrangement comprising at least one power semiconductor component integrated in a semiconductor body and at least one logic component integrated in the semiconductor body, the logic component comprising:
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a trench extending into the semiconductor body proceeding from a first side; at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric; a first source zone and a first drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a longitudinal direction of the trench and between which a first body zone of a second conduction type is arranged; and at least a second source zone and at least a second drain zone that are separated from each other by a second body zone and formed along the trench.
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9. A semiconductor component arrangement comprising at least one logic component integrated in a semiconductor body, having a first side, the logic component comprising:
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a trench extending into the semiconductor body proceeding from the first side; at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric; a first source zone and a first drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which a first body zone of a second conduction type is arranged; and at least a second source zone and at least a second drain zone that are separated from each other by a second body zone and formed along the trench. - View Dependent Claims (10, 11, 12, 13)
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14. A semiconductor component body comprising:
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a power semiconductor component integrated in the semiconductor body; a trench extending into the semiconductor body from a first surface; a gate electrode configured in the trench; a gate dielectric arranged to insulate the gate electrode from the semiconductor body; a first source zone of a first conduction type in the semiconductor body and adjacent the gate dielectric; a first drain zone of a first conduction type in the semiconductor body, adjacent the gate dielectric and spaced apart from the source zone in a peripheral direction relative to the trench; a first body zone of a second conduction type between the first source zone and the first drain zone, wherein the gate electrode, the gate dielectric, the first source zone, the first drain zone and the first body zone together form a first transistor; and a second source zone, a second drain zone and a second body zone formed along the trench to form a second transistor. - View Dependent Claims (15, 16)
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Specification