MAGNETIC DEVICES AND METHODS OF FABRICATING THE SAME
First Claim
Patent Images
1. A magnetic device comprising:
- a first magnetic pattern and a second magnetic pattern disposed on a substrate; and
a tunnel barrier pattern interposed between the first magnetic pattern and the second magnetic pattern,wherein an edge portion of the tunnel barrier pattern is thicker than a central portion of the tunnel barrier pattern, and wherein the central portion of the tunnel barrier pattern has a substantially uniform thickness.
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Abstract
Magnetic devices and methods of fabricating the same are provided. According to the magnetic device, a tunnel barrier pattern is interposed between a first magnetic pattern and a second magnetic pattern. An edge portion of the tunnel barrier pattern is thicker than a central portion of the tunnel barrier pattern. The central portion of the tunnel barrier pattern has a substantially uniform thickness.
111 Citations
21 Claims
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1. A magnetic device comprising:
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a first magnetic pattern and a second magnetic pattern disposed on a substrate; and a tunnel barrier pattern interposed between the first magnetic pattern and the second magnetic pattern, wherein an edge portion of the tunnel barrier pattern is thicker than a central portion of the tunnel barrier pattern, and wherein the central portion of the tunnel barrier pattern has a substantially uniform thickness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10-17. -17. (canceled)
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18. A magnetic device comprising:
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a first magnetic pattern and a second magnetic pattern stacked over a substrate; and a tunnel barrier pattern interposed between the first magnetic pattern and the second magnetic pattern, wherein an edge portion of the tunnel barrier pattern is thicker than a central portion of the tunnel barrier pattern, and wherein all or substantially all of a top surface of the central portion of the tunnel barrier pattern is substantially planar. - View Dependent Claims (19, 20)
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21. A system on chip comprising:
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a processor; and a magnetic device electrically coupled to the processor, the memory device including;
a first magnetic pattern and a second magnetic pattern disposed on a substrate; anda tunnel barrier pattern interposed between the first magnetic pattern and the second magnetic pattern, wherein an edge portion of the tunnel barrier pattern is thicker than a central portion of the tunnel barrier pattern, and wherein the central portion of the tunnel barrier pattern has a substantially uniform thickness.
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Specification