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VERTICAL ESD PROTECTION DEVICE

  • US 20120299146A1
  • Filed: 05/22/2012
  • Published: 11/29/2012
  • Est. Priority Date: 05/25/2011
  • Status: Active Grant
First Claim
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1. A method for forming a vertical electrostatic discharge (ESD) protection device, comprising:

  • depositing a multi-layer n-type epitaxial layer on a substrate having p-type surface including first epitaxial depositing to form a first n-type epitaxial layer on said p-type surface, and second epitaxial depositing to form a second n-type epitaxial layer formed on said first n-type epitaxial layer, wherein said first n-type epitaxial layer has a peak doping level which is at least double that of said second n-type epitaxial layer;

    forming a p+ layer on said second n-type epitaxial layer;

    etching through said p+ layer and said multi-layer n-type epitaxial layer to reach said substrate to form a trench;

    filling said trench with a filler material to form a trench isolation region, andforming a metal contact on said p+ layer for providing contact to said p+ layer.

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