×

INTEGRATED CIRCUIT MEMORY DEVICE

  • US 20120300555A1
  • Filed: 05/23/2012
  • Published: 11/29/2012
  • Est. Priority Date: 05/27/2011
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor memory device comprising:

  • a plurality of memory regions formed on one chip, each of the memory regions having a plurality of volatile memory cells that are formed as a density of 2̂

    K bits, where K is an integer greater than or equal to 0, and a plurality of input/output (I/O) terminals for inputting and outputting data of the volatile memory cells, an entire density of the memory regions corresponding to an interim density; and

    at least one peripheral region configured to control a write operation for writing data into the memory regions and a read operation for reading data from the memory regions based on an externally input command and address.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×