INTEGRATED CMOS POROUS SENSOR

• US 20120304742A1
• Filed: 07/30/2012
• Published: 12/06/2012
• Est. Priority Date: 04/02/2004
• Status: Abandoned Application

• Current Assignee: ChipSensors Ltd. (Silicon Laboratories Incorporated)
• Original Assignee: ChipSensors Ltd. (Silicon Laboratories Incorporated)
• Inventors: Cummins, Timothy
• Application Number:
  US13/561,447
• Publication Number:
  US 20120304742A1
• Time in Patent Office: Days
• US Class Current: 73/31.06
• CPC Class Codes: G01N 27/121 for determining moisture content, e.g. humidity, of the fluid moisture content of the tested material G01N27/048
• CPC Class Codes: G01N 27/223 for determining moisture content, e.g. humidity rain detectors on vehicle windows B60S1/0825
• CPC Class Codes: G01N 33/0032 using two or more different physical functioning modes
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 23/34 Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/5228 Resistive arrangements or effects of, or between, wiring layers other resistive arrangements H01L23/647
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 27/105 including field-effect components
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]

Abstract

A single chip wireless sensor comprises a microcontroller and transmit/receive interface, which is coupled to a antenna by an L-C matching circuit. The sensor senses gas or humidity and temperature. The device is an integrated chip manufactured in a process in which the electronics and sensor components are manufactured using CMOS processing techniques, applied to achieve both electronic and sensing components in an integrated process. A Low-K material with an polymer component is spun onto the wafer to form a top layer incorporating sensing electrodes. This material is cured at 300° C., lower than CVD temperatures. The polyimide when cured becomes thermoset, and the lower mass-to-volume ratio resulting in its dielectric constant, reducing to 2.9. The thermoset dielectric, not regarded as porous in the conventional sense, has sufficient free space volume to admit enough gas or humidity for sensing.

Claims

1. An integrated gas sensor device comprising:

a semiconductor integrated circuit formed on a single substrate, the semiconductor integrated circuit comprising;

MOS circuits formed in the substrate;

a plurality of interconnect levels comprised of interconnect conductors and insulating materials above the MOS circuits, the interconnect levels provided as routing interconnect levels for the semiconductor integrated circuit;

a resistive sensor layer and a capacitive sensor layer, both the resistive sensor layer and the capacitive sensor layer being formed above the plurality of interconnect levels and being exposed to an ambient atmosphere within which a gas to be sensed may be present; and

a microcontroller coupled to the resistive sensor layer and capacitive sensor layer, the microcontroller utilizing together resistance measurements from the resistive sensor layer and capacitance measurements from the capacitive sensor layer to provide a measurement indicative of gas concentration levels.

2. A method of sensing a gas concentration, comprising:

providing a semiconductor integrated circuit formed on a single substrate, semiconductor integrated circuit comprising MOS circuits;

providing a plurality of interconnect levels comprised of interconnect conductors and insulating materials above the MOS circuits, the interconnect levels provided as routing interconnect levels for the semiconductor integrated circuit;

providing a resistive sensor layer and a capacitive sensor layer, as part of semiconductor integrated circuit, above the plurality of interconnect levels and being exposed to an ambient atmosphere within which a gas to be sensed may be present;

providing a microcontroller as part of the semiconductor integrated circuit and coupled to the resistive sensor layer and capacitive sensor layer; and

configuring the semiconductor integrated circuit such that resistance measurements from the resistive sensor layer and capacitance measurements from the capacitive sensor layer may be utilized together by the microcontroller to provide a measurement indicative of gas concentration levels in the ambient atmosphere.