beta-Ga2O3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL GROWING METHOD, Ga2O3 LIGHT-EMITTING DEVICE, AND ITS MANUFACTURING METHOD

• US 20120304918A1
• Filed: 08/13/2012
• Published: 12/06/2012
• Est. Priority Date: 02/24/2003
• Status: Active Grant

• Current Assignee: Encarnacion Antonia Garcia Villora, Kazuo Aoki, Kiyoshi Shimamura, Noboru Ichinose
• Original Assignee: Encarnacion Antonia Garcia Villora, Kazuo Aoki, Kiyoshi Shimamura, Noboru Ichinose
• Inventors: Ichinose, Noboru, Shimamura, Kiyoshi, Aoki, Kazuo, Garcia Villora, Encarnacion Antonia
• Granted Patent: US 8,747,553 B2
• Time in Patent Office: Days
• US Class Current: 117/94
• CPC Class Codes: C30B 23/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/16 Oxides
• CPC Class Codes: H01L 21/02414 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/18 within the light emitting region
• CPC Class Codes: H01L 33/26 Materials of the light emitting region

Abstract

A method of growing a p-type thin film of β-Ga₂O₃ includes preparing a substrate including a β-Ga₂O₃ single crystal, and growing a p-type thin film of β-Ga₂O₃ on the substrate. The p-type thin film is grown in a manner that Ga in the thin film is replaced by a p-type dopant selected from H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, and Pb.

Claims

1. A method of growing a p-type thin film of β

-Ga₂O₃, said method comprising;

preparing a substrate comprising a β

-Ga₂O₃ single crystal; and

growing the p-type thin film of β

-Ga₂O₃ on the substrate, the p-type thin film being grown in a manner that Ga in the thin film is replaced by a p-type dopant selected from H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, and Pb.

2. The method, as defined in claim 1, wherein the growing the p-type thin film of β

-Ga₂O₃ on the substrate is carried out by a method selected from Pulsed Laser Deposition (PLD), Molecular Beam Epitaxy (MBE), Metal Organic Vapor Deposition (MOCVD), a sputtering method, Chemical Vapor Deposition (CVD), and plasma CVD.

3. The method, as defined in claim 1, wherein the substrate is grown in a b-axis <

010>

direction.

4. A method of growing a p-type thin film of β

-Ga₂O₃, said method comprising;

preparing a substrate comprising a β

-Ga₂O₃ single crystal; and

growing the p-type thin film of β

-Ga₂O₃ on the substrate, the p-type thin film being grown in a manner that oxygen in the thin film is replaced by a p-type dopant including P.

5. The method, as defined in claim 4, wherein the growing the p-type thin film of β

-Ga₂O₃ on the substrate is carried out by a method selected from Pulsed Laser Deposition (PLD), Molecular Beam Epitaxy (MBE), Metal Organic Vapor Deposition (MOCVD), a sputtering method, Chemical Vapor Deposition (CVD), and plasma CVD.

6. The method, as defined in claim 4, wherein the substrate is grown in a b-axis <

010>

direction.