PHOTOVOLTAIC DEVICE COMPRISING SILICON MICROPARTICLES

• US 20120305075A1
• Filed: 05/25/2012
• Published: 12/06/2012
• Est. Priority Date: 06/03/2011
• Status: Abandoned Application

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: FORD, William, NELLES, Gabriele, von WROCHEM, Florian
• Application Number:
  US13/481,344
• Publication Number:
  US 20120305075A1
• Time in Patent Office: Days
• US Class Current: 136/257
• CPC Class Codes: H01L 31/03529 Shape of the potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/0384 including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material H01L31/0392 takes precedence
• CPC Class Codes: H01L 31/055 where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
• CPC Class Codes: H01L 31/072 the potential barriers being only of the PN heterojunction type
• CPC Class Codes: H01L 31/0745 comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
• CPC Class Codes: Y02E 10/52 PV systems with concentrators

Abstract

The present invention relates to a photovoltaic device comprising silicon microparticles and to a method of producing the same.

Claims

1. A photovoltaic device comprising

a conductor layer;

a semiconductor layer;

an insulator layer sandwiched between the conductor layer and the semiconductor layer; and

a silicon microparticle,

wherein

the silicon microparticle is partially embedded in the conductor layer and partially embedded in the insulator layer,

the silicon microparticle is in contact with the semiconductor layer and the conductor layer, and

the semiconductor layer comprises a material which is not silicon.

2. The photovoltaic device of claim 1, further comprising a heterojunction interface between the silicon microparticle and the semiconductor layer.

3. The photovoltaic device of claim 1, wherein the conductor layer comprises material selected from the group consisting of magnesium, hafnium, manganese, indium, gallium, bismuth, silver, aluminium, vanadium, zinc, titanium, tin, brass, bronze, germanium, gold, palladium, nickel, amorphous carbon, glassy carbon, graphite, and a graphene, conjugated organic polymer.

4. The photovoltaic device of claim 3, wherein the material has a work function WF which differs by 0.5 eV or less from a Fermi energy E_F of the silicon microparticle.

5. The photovoltaic device of claim 1, wherein the semiconductor layer comprises a p-type semiconductor or an n-type semiconductor.

6. The photovoltaic device of claim 1, wherein the silicon microparticle comprises n-type silicon or p-type silicon.

7. The photovoltaic device of claim 1, wherein the semiconductor layer comprises a p-type semiconductor and the silicon microparticle comprises n-type silicon.

8. The photovoltaic device of claim 7, wherein a valence band energy of the p-type semiconductor and a valence band energy of the n-type silicon microparticle differ by 0.5 eV or less.

9. The photovoltaic device of claim 1, wherein the semiconductor layer comprises an n-type semiconductor and the silicon microparticle comprises p-type silicon.

10. The photovoltaic device of claim 9, wherein a conduction band energy of the n-type semiconductor and a conduction band energy of the p-type silicon microparticle differ by 0.5 eV or less.

11. The photovoltaic device of claim 1, wherein the silicon microparticle has a median volume-based size of 5-500 μ

m.

12. The photovoltaic device of claim 1, further comprising an encapsulating layer on the semiconductor layer opposite of the insulator layer.

13. The photovoltaic device of claim 1, further comprising an adhesive layer on the conductor layer opposite of the insulator layer.

14. The photovoltaic device of claim 1, wherein the silicon microparticle is a planarized silicon microparticle.

15. The photovoltaic device of claim 14, wherein the planarized silicon microparticle is co-planar with an interface between the semiconductor layer and the insulator layer.

16. The photovoltaic device of claim 1, wherein the silicon microparticle further comprises a porous silicon layer, wherein the porous silicon layer covers a surface of the silicon microparticle, and the porous silicon layer is in contact with the semiconductor layer.

17. The photovoltaic device of claim 1, wherein the silicon microparticle is partially embedded in the semiconductor layer.

18. The photovoltaic device of claim 1, further comprising a barrier layer between the silicon microparticle and the semiconductor layer.

19. The photovoltaic device of claim 1, further comprising a barrier layer between the silicon microparticle and the conductor layer.

20. The photovoltaic device of claim 1, wherein the insulator layer or the semiconductor layer comprises a luminescent dopant.

21. The photovoltaic device of claim 12, wherein the encapsulating layer comprises a luminescent dopant.

22. A method of producing the photovoltaic device of claim 1, the method comprising:

partially embedding silicon microparticles in a conductor layer.

23. The method of claim 22, comprising a series of operations selected from the group consisting of series a), series b), and series c):

a);

depositing the insulator layer on the conductor layer,

pressing silicon microparticles through the insulator layer and partially into the conductor layer,

depositing the semiconductor layer onto the insulator layer;

b);

depositing silicon microparticles on the conductor layer,

pressing the silicon microparticles partially into the conductor layer,

depositing the insulator layer onto the conductor layer such that the insulator layer covers the conductor layer and such that the silicon microparticles pressed and partially embedded in the conductor layer become also partially embedded in the insulator layer,

depositing the semiconductor layer on the insulator layer;

and c);

depositing silicon microparticles onto a temporary layer,

pressing the silicon microparticles partially into the temporary layer, such that the silicon microparticles become partially embedded into the temporary layer,

depositing the conductor layer onto the silicon microparticles, partially embedded in the temporary layer,

removing the temporary layer,

depositing the insulator layer onto the conductor layer such that the insulator layer covers the conductor layer and such that the silicon microparticles partially embedded in the conductor layer become also partially embedded in the insulator layer,

depositing the semiconductor layer on the insulator layer;

and, wherein the method optionally further comprises;

providing, in any order, an electrical contact to the conductor layer and the semiconductor layer and depositing an encapsulating layer on the semiconductor layer.