LIGHT-EMITTING DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A light-emitting diode (LED) device, comprising:
- a substrate, having a first surface and a second surface opposite to each other;
a first bonding layer, disposed on the first surface;
a first epitaxial structure, having a third surface and a fourth surface opposite to each other and comprising a first groove and a second groove, wherein the first epitaxial structure comprises a second electrical type semiconductor layer, an active layer and a first electrical type semiconductor layer sequentially stacked on the first bonding layer, and the first groove extends from the fourth surface to the first electrical type semiconductor layer via the active layer, the second groove extends from the fourth surface to the third surface, and the first electrical type semiconductor layer and the second electrical type semiconductor layer have different electrical type;
a first electrical type conductive branch, disposed on the first electrical type semiconductor layer in the first groove;
a first electrical type electrode layer, disposed in the second groove, coplanar with the third surface and connected to the first electrical type conductive branch;
an insulating layer, filled in the first groove and the second groove; and
a second electrical type electrode layer, electrically connected to the second type electrical semiconductor layer.
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Accused Products
Abstract
A light-emitting diode (LED) device, includes a substrate, having a first and a second surfaces, a first bonding layer, disposed on the first surface, a first epitaxial structure, having a third and a fourth surfaces and comprising a first and a second groove, wherein the first epitaxial structure comprises a second electrical type semiconductor layer, an active layer and a first electrical type semiconductor layer sequentially stacked on the first bonding layer, and the first groove extends from the fourth surface to the first electrical type semiconductor layer via the active layer, the second groove extends from the fourth surface to the third surface, a first electrical type conductive branch, a first electrical type electrode layer, an insulating layer, filled in the first and the second grooves, and a second electrical type electrode layer, electrically connected to the second electrical type semiconductor layer.
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Citations
21 Claims
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1. A light-emitting diode (LED) device, comprising:
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a substrate, having a first surface and a second surface opposite to each other; a first bonding layer, disposed on the first surface; a first epitaxial structure, having a third surface and a fourth surface opposite to each other and comprising a first groove and a second groove, wherein the first epitaxial structure comprises a second electrical type semiconductor layer, an active layer and a first electrical type semiconductor layer sequentially stacked on the first bonding layer, and the first groove extends from the fourth surface to the first electrical type semiconductor layer via the active layer, the second groove extends from the fourth surface to the third surface, and the first electrical type semiconductor layer and the second electrical type semiconductor layer have different electrical type; a first electrical type conductive branch, disposed on the first electrical type semiconductor layer in the first groove; a first electrical type electrode layer, disposed in the second groove, coplanar with the third surface and connected to the first electrical type conductive branch; an insulating layer, filled in the first groove and the second groove; and a second electrical type electrode layer, electrically connected to the second type electrical semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for manufacturing a light-emitting diode (LED) device, comprising:
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forming a first epitaxial structure on a first substrate, wherein the first epitaxial structure comprises a first electrical type semiconductor layer, an active layer and a second electrical type semiconductor layer sequentially stacked on the first substrate, and the first epitaxial structure comprises a first groove and a second groove, the first groove and the second groove respectively extend from the second electrical type semiconductor layer to the first electrical type semiconductor layer and the first substrate; forming a first electrical type conductive branch and a first electrical type electrode layer respectively on the first electrical type semiconductor layer in the first groove and on the first substrate in the second groove; forming an insulating layer filled in the first groove and the second groove; forming a first bonding layer on the second electrical type semiconductor layer and the insulating layer; bonding a second substrate to the first bonding layer; and removing the first substrate. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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Specification