SEMICONDUCTOR DEVICE

• US 20120305996A1
• Filed: 05/29/2012
• Published: 12/06/2012
• Est. Priority Date: 06/01/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: MATSUKURA, Hideki
• Granted Patent: US 10,504,920 B2
• Time in Patent Office: Days
• US Class Current: 257/296
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors

Abstract

An area occupied by a circuit element having at least a capacitor and a transistor is reduced in a semiconductor device. In a semiconductor device including a first transistor, a second transistor, and a capacitor, the first transistor and the capacitor are provided over the second transistor. Then, a common electrode, which serves as one of a source and a drain of the first transistor and one electrode of the capacitor, is provided. In addition, the other electrode of the capacitor is provided over the common electrode.

Claims

1. A semiconductor device comprising:

a first transistor;

a second transistor; and

a capacitor,

wherein one of a source and a drain of the first transistor is electrically connected to a gate of the second transistor,

wherein the first transistor and the capacitor are provided over the second transistor,

wherein the first transistor and the capacitor comprise a common electrode serving as the one of the source and the drain of the first transistor and one electrode of the capacitor, and

wherein the other electrode of the capacitor is provided over the common electrode.

2. The semiconductor device according to claim 1, wherein the common electrode is electrically connected to the gate of the second transistor through an opening portion provided in a semiconductor layer of the first transistor.

3. The semiconductor device according to claim 1, wherein the common electrode is electrically connected to the gate of the second transistor through a plurality of opening portions provided in a semiconductor layer of the first transistor.

4. The semiconductor device according to claim 1, wherein a semiconductor layer of the first transistor and a semiconductor layer of the second transistor overlap with each other.

5. The semiconductor device according to claim 1, wherein the other electrode of the capacitor overlaps with the common electrode and a semiconductor layer of the first transistor.

6. The semiconductor device according to claim 1,

wherein a gate of the first transistor is electrically connected to the common electrode using a wiring provided over the other electrode of the capacitor, and

wherein the wiring is electrically connected to the common electrode through an opening portion provided in the other electrode of the capacitor.

7. A semiconductor device comprising:

a first transistor;

a second transistor; and

a capacitor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein the first transistor and the capacitor are provided over the second transistor,

wherein the first transistor and the capacitor comprise a common electrode serving as the one of the source and the drain of the first transistor and one electrode of the capacitor, and

wherein the other electrode of the capacitor is provided over the common electrode.

8. The semiconductor device according to claim 7, wherein the common electrode is electrically connected to the one of the source and the drain of the second transistor through an opening portion provided in a semiconductor layer of the first transistor.

9. The semiconductor device according to claim 7, wherein the common electrode is electrically connected to the gate of the second transistor through a plurality of opening portions provided in a semiconductor layer of the first transistor.

10. The semiconductor device according to claim 7, wherein a semiconductor layer of the first transistor and a semiconductor layer of the second transistor overlap with each other.

11. The semiconductor device according to claim 7, wherein the other electrode of the capacitor overlaps with the common electrode and a semiconductor layer of the first transistor.

12. The semiconductor device according to claim 7,

wherein a gate of the first transistor is electrically connected to the common electrode using a wiring provided over the other electrode of the capacitor, and

wherein the wiring is electrically connected to the common electrode through an opening portion provided in the other electrode of the capacitor.

13. A semiconductor device comprising:

a transistor;

a capacitor; and

a common electrode serving as one of a source and a drain of the transistor and one electrode of the capacitor,

wherein the other electrode of the capacitor is provided over the common electrode,

wherein a gate of the transistor is electrically connected to the common electrode using a wiring provided over the other electrode of the capacitor, and

wherein the wiring is electrically connected to the common electrode through an opening portion provided in the other electrode of the capacitor.