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SEMICONDUCTOR DEVICE

  • US 20120305996A1
  • Filed: 05/29/2012
  • Published: 12/06/2012
  • Est. Priority Date: 06/01/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor;

    a second transistor; and

    a capacitor,wherein one of a source and a drain of the first transistor is electrically connected to a gate of the second transistor,wherein the first transistor and the capacitor are provided over the second transistor,wherein the first transistor and the capacitor comprise a common electrode serving as the one of the source and the drain of the first transistor and one electrode of the capacitor, andwherein the other electrode of the capacitor is provided over the common electrode.

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