MASK INSPECTION METHOD, MASK PRODUCTION METHOD, SEMICONDUCTOR DEVICE PRODUCTION METHOD, AND MASK INSPECTION DEVICE
First Claim
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1. A mask inspection method comprising:
- creating original data corresponding to a semiconductor integrated circuit pattern to be formed on a substrate;
performing original production simulation which mocks an original production process on the original data to derive, as original production pattern information, information relating to an original pattern shape in the case of forming an original pattern corresponding to the original data on an original;
determining whether or not the original production pattern information satisfies a predetermined value decided based on the original production process;
performing original inspection simulation which mocks an optical system of an original inspection device to be used for inspection of the original to derive, as original measurement pattern information, information relating to an original pattern shape to be detected when the original inspection device inspects the original; and
determining whether or not a result of the inspection of the original is within an allowable range by using the original measurement pattern information.
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Abstract
A mask inspection method according to the embodiments, original data corresponding to a semiconductor integrated circuit pattern to be formed on a substrate is created. After that, original production simulation which mocks an original production process is performed on the original data to derive information relating to an original pattern shape in the case of forming an original pattern corresponding to the original data on an original. After that, whether or not the information relating to an original pattern shape satisfies a predetermined value decided based on the original production process is determined.
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Citations
19 Claims
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1. A mask inspection method comprising:
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creating original data corresponding to a semiconductor integrated circuit pattern to be formed on a substrate; performing original production simulation which mocks an original production process on the original data to derive, as original production pattern information, information relating to an original pattern shape in the case of forming an original pattern corresponding to the original data on an original; determining whether or not the original production pattern information satisfies a predetermined value decided based on the original production process; performing original inspection simulation which mocks an optical system of an original inspection device to be used for inspection of the original to derive, as original measurement pattern information, information relating to an original pattern shape to be detected when the original inspection device inspects the original; and determining whether or not a result of the inspection of the original is within an allowable range by using the original measurement pattern information. - View Dependent Claims (2, 3, 4, 5)
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6. A mask production method comprising:
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creating original data corresponding to a semiconductor integrated circuit pattern to be formed on a substrate; performing original production simulation which mocks an original production process on the original data to derive, as original production pattern information, information relating to an original pattern shape in the case of forming an original pattern corresponding to the original data on an original; determining whether or not the original production pattern information satisfies a predetermined value decided based on the original production process; performing original inspection simulation which mocks an optical system of an original inspection device to be used for inspection of the original to derive, as original measurement pattern information, information relating to an original pattern shape to be detected when the original inspection device inspects the original; determining whether or not a result of the inspection of the original is within an allowable range by using the original measurement pattern information; forming the original pattern corresponding to the original data on the original; changing at least one of the semiconductor integrated circuit pattern, the original data, and processing conditions for the original production process so as to satisfy the predetermined value in the case where the original production pattern information does not satisfy the predetermined value; and changing at least one of design layout data of the semiconductor integrated circuit pattern, the original data, the processing conditions of the original production process, and conditions for inspecting the original so that the original measurement pattern information is within the allowable range in the case where the original measurement pattern information is outside the allowable range. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A semiconductor device production method comprising:
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creating original data corresponding to a semiconductor integrated circuit pattern to be formed on a substrate; performing original production simulation which mocks an original production process on the original data to derive, as original production pattern information, information relating to an original pattern shape in the case of forming an original pattern corresponding to the original data on an original; determining whether or not the original production pattern information satisfies a predetermined value decided based on the original production process; performing original inspection simulation which mocks an optical system of an original inspection device to be used for inspection of the original to derive, as original measurement pattern information, information relating to original pattern shape to be detected when the original inspection device inspects the original; determining whether or not a result of the inspection of the original is within an allowable range by using the original measurement pattern information; forming the original pattern corresponding to the original data on the original; forming the semiconductor integrated circuit pattern by transferring the original pattern on the substrate; changing at least one of the semiconductor integrated circuit pattern, the original data, processing conditions for the original production process, and production process conditions of the semiconductor integrated circuit pattern to be formed on the substrate so as to satisfy the predetermined value in the case where the original production pattern information does not satisfy the predetermined value; and changing at least one of design layout data of the semiconductor integrated circuit pattern, the original data, the processing conditions of the original production process, conditions for inspecting the original, and production process conditions of the semiconductor integrated circuit pattern to be formed on the substrate so that the original measurement pattern information is within the allowable range in the case where the original measurement pattern information is outside the allowable range. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A mask inspection device comprising:
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an input unit which inputs original data corresponding to a semiconductor integrated circuit pattern to be formed on a substrate; a simulation unit which performs original production simulation which mocks an original production process on the original data to derive, as original production pattern information, information relating to an original pattern shape in the case of forming an original pattern corresponding to the original data on an original; and a verification unit which determines whether or not the original production pattern information satisfies a predetermined value decided based on the original production process.
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19. A mask inspection device comprising:
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an input unit which inputs an original pattern shape of an original used for forming a semiconductor integrated circuit pattern on a substrate; a simulation unit which performs original inspection simulation which mocks an optical system of an original inspection device to be used for inspection of the original to derive, as original measurement pattern information, information relating to an original pattern shape to be detected when the original inspection device inspects the original; and a determination unit which determines whether or not a result of the inspection of the original is within an allowable range by using the original measurement pattern information.
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Specification