SEMICONDUCTOR DEVICE STRUCTURES AND THE SEPARATING METHODS THEREOF
First Claim
1. A method of separating semiconductor device structures, comprising:
- providing a substrate, comprising a first surface and a second surface opposite to the first surface;
forming a plurality of semiconductor epitaxial stacks on the first surface;
forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks;
performing a physical etching process to directly sever the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and
separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly server the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.
-
Citations
19 Claims
-
1. A method of separating semiconductor device structures, comprising:
-
providing a substrate, comprising a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly sever the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A semiconductor device structure, comprising:
-
a substrate comprising a first surface and a plurality of sidewalls adjacent to the first surface, wherein all of the sidewalls are roughened by microblasting; and a semiconductor epitaxial stack formed on the first surface, comprising; a first semiconductor material layer with a first electrical conductivity; a second semiconductor material layer with a second electrical conductivity; and an active layer positioned between the first semiconductor material layer and the second semiconductor material layer. - View Dependent Claims (10, 11, 12, 13, 14, 15)
-
-
16. A package type semiconductor device structure, comprising:
-
a substrate comprising a first surface, a second surface opposite to the first surface, and a plurality of the first sidewalls adjacent to the first surface; a semiconductor epitaxial stack formed on the first surface, comprising; a first semiconductor material layer with a first electrical conductivity; a second semiconductor material layer with a second electrical conductivity; an active layer positioned between the first semiconductor material layer and the second semiconductor material layer; and a third surface facing the first surface and a plurality of the second sidewalls adjacent to the third surface; and a protecting layer, covering the second surface, the first sidewalls, and the second sidewalls. - View Dependent Claims (17, 18, 19)
-
Specification