PERFORMANCE OPTIMIZATION OF POWER AMPLIFIER

• US 20120313710A1
• Filed: 06/07/2011
• Published: 12/13/2012
• Est. Priority Date: 06/07/2011
• Status: Active Grant

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Hull, William P. Jr., Wilson, James S., Leoni, Robert E.
• Granted Patent: US 8,427,238 B2
• Time in Patent Office: Days
• US Class Current: 330/289
• CPC Class Codes: H03F 1/52 Circuit arrangements for protecting such amplifiers monitoring arrangements G01R31/28; increasing reliability in communication systems, e.g. using redundancy H04B1/74
• CPC Class Codes: H03F 1/56 Modifications of input or output impedances, not otherwise provided for

Abstract

Aspects of embodiments according to the present invention are directed toward a circuitry and a method to accurately measure the junction temperature of power amplifier and uses the measurement to enable optimization of performance in the presence of a mismatched load via control of the power amplifier such that corrective action to mitigate effects of the mismatched load can be performed.

Claims

1. A circuit comprising:

an amplifier circuit for driving an RF load;

a sensor for sensing a temperature condition of the amplifier circuit; and

a controller for initiating corrective action and/or feedback of the temperature condition to an external controller in accordance with a load condition of the RF load.

2. The circuit of claim 1, wherein the load condition comprises an impedance mismatch condition.

3. The circuit of claim 1, wherein the amplifier circuit is configured to drive the RF load without a circulator or an isolator coupled between the amplifier circuit and the RF load.

4. The circuit of claim 1, wherein the sensor is in thermal contact with the amplifier circuit such that the temperature sensed by the sensor correlates to that of at least one transistor of the amplifier circuit.

5. The circuit of claim 4, wherein the temperature sensed by the sensor correlates to a junction temperature of the at least one transistor.

6. The circuit of claim 4, wherein the amplifier circuit comprises a plurality of transistor cells, each of the at least one transistor being included in a corresponding one of the transistor cells, and the sensor is included in a corresponding one of the transistor cells.

7. The circuit of claim 1, further comprising a sense circuitry for measuring a state of the sensor.

8. The circuit of claim 7, wherein the sensor comprises a diode coupled to the sense circuitry.

9. The circuit of claim 7, wherein the sensor comprises a transistor coupled to the sense circuitry.

10. The circuit of claim 1, wherein the controller is configured to adjust at least one operating condition of the amplifier circuit to compensate for a mismatch condition of the RF load.

11. The circuit of claim 10, wherein the at least one operating condition comprises a bias condition of the amplifier circuit.

12. The circuit of claim 11, wherein the at least one operating condition comprises a drain voltage of a transistor included in the amplifier circuit.

13. The circuit of claim 10, wherein the at least one operating condition comprises a drive level to the amplifier circuit.

14. The circuit of claim 1, wherein the controller is configured to retune an output stage of the amplifier circuit.

15. A method of operating an amplifier circuit, the method comprising:

operating the amplifier circuit to drive an RF load coupled to the amplifier circuit;

sensing a temperature of the amplifier circuit;

determining a mismatch condition between the RF load and the amplifier circuit in accordance with the temperature of the amplifier circuit; and

compensating for the mismatch condition between the amplifier circuit and the RF load.

16. The method of claim 15, wherein the mismatch condition comprises an impedance mismatch condition.

17. The method of claim 15, further comprising driving the RF load without a circulator or an isolator coupled between the amplifier circuit and the RF load.

18. The method of claim 15, wherein the sensed temperature correlates to that of at least one transistor of the amplifier circuit.

19. The method of claim 18, wherein the sensed temperature correlates to a junction temperature of the at least one transistor.

20. The method of claim 15, wherein compensating for the mismatch condition comprises adjusting at least one operating condition of the amplifier circuit.

21. The method of claim 20, wherein the adjusting of the at least one operating condition comprises adjusting a bias condition of the amplifier circuit.

22. The method of claim 20, wherein the adjusting of the at least one operating condition comprises adjusting a drive level to the amplifier circuit.

23. The method of claim 20, wherein the adjusting of the at least one operating condition comprises adjusting a drain voltage of a transistor included in the amplifier circuit.

24. The method of claim 15, wherein compensating for the mismatch condition comprises retuning an output stage of the amplifier circuit in accordance with the temperature.

25. The method of claim 15, further comprising performing prognostication of performance and reliability over the life of the amplifier circuit and/or an active electronically scanned antenna including the amplifier circuit.