MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• US 20120315730A1
• Filed: 05/31/2012
• Published: 12/13/2012
• Est. Priority Date: 06/10/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: KOEZUKA, Junichi, OHNO, Shinji, SATO, Yuichi, YAMAZAKI, Shunpei
• Granted Patent: US 9,287,407 B2
• Time in Patent Office: Days
• US Class Current: 438/158
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/495 the conductor material next to the insulator being a simple metal, e.g. W, Mo H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film;

forming a film including a metal element so as to be in contact with the oxide semiconductor film;

performing a heat treatment in a state where the oxide semiconductor film is in contact with the film including the metal element, so that the metal element is added to the oxide semiconductor film from the film including the metal element; and

adding a dopant to the oxide semiconductor film through the film including the metal element,

wherein low-resistance regions are formed in the oxide semiconductor film by the heat treatment and the addition of the dopant,

wherein a channel formation region is between the low-resistance regions in the oxide semiconductor film,

wherein the low-resistance regions have a resistance lower than a resistance of the channel formation region, and

wherein the low-resistance regions include the metal element and the dopant.

2. The method for manufacturing a semiconductor device according to claim 1, further comprising a step of removing the film including the metal element after forming the low-resistance regions.

3. The method for manufacturing a semiconductor device according claim 1, wherein a source electrode layer and a drain electrode layer are formed in contact with the oxide semiconductor film.

4. The method for manufacturing a semiconductor device according to claim 1, wherein one or more selected from the group consisting of aluminum, titanium, molybdenum, tungsten, hafnium, tantalum, lanthanum, barium, magnesium, zirconium, and nickel is used as the metal element.

5. The method for manufacturing a semiconductor device according to claim 1, wherein one or more selected from the group consisting of phosphorus, arsenic, antimony, boron, aluminum, nitrogen, argon, helium, neon, indium, fluorine, chlorine, titanium, and zinc is used as the dopant.

6. The method for manufacturing a semiconductor device according to claim 1, wherein a heat treatment by which hydrogen or moisture is eliminated from the oxide semiconductor film is performed on the oxide semiconductor film before the forming of the film including the metal element.

7. The method for manufacturing a semiconductor device according to claim 6, wherein oxygen is added to the oxide semiconductor film after the heat treatment by which hydrogen or moisture is eliminated from the oxide semiconductor film.

8. The method for manufacturing a semiconductor device according to claim 1, wherein the dopant is added to the oxide semiconductor film by adding a single ion of the dopant or a hydride ion, a fluoride ion, or a chloride ion thereof.

9. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film;

forming a stack of a gate insulating film and a gate electrode layer over the oxide semiconductor film;

forming a film including a metal element to be in contact with part of the oxide semiconductor film over the oxide semiconductor film, the gate insulating film, and the gate electrode layer;

adding a dopant to the oxide semiconductor film through the film including the metal element with the gate insulating film and the gate electrode layer used as a mask; and

heating the doped oxide semiconductor film and the film including the metal element to add the metal element to the oxide semiconductor film from the film including the metal element, so that low-resistance regions whose resistance is lower than a resistance of a channel formation region in the oxide semiconductor film are formed in the oxide semiconductor film,

wherein the channel formation region overlaps with the gate electrode layer,

wherein the low-resistance regions include the metal element and the dopant, and

wherein the low-resistance regions are formed in the oxide semiconductor film so as to sandwich the channel formation region.

10. The method for manufacturing a semiconductor device according to claim 9, wherein the film including the metal element is made to be a metal oxide insulating film by the heating of the doped oxide semiconductor film.

11. The method for manufacturing a semiconductor device according to claim 9, further comprising a step of removing the film including the metal element after forming the low-resistance regions.

12. The method for manufacturing a semiconductor device according claim 9, wherein a source electrode layer and a drain electrode layer are formed in contact with the oxide semiconductor film.

13. The method for manufacturing a semiconductor device according to claim 9, wherein one or more selected from the group consisting of aluminum, titanium, molybdenum, tungsten, hafnium, tantalum, lanthanum, barium, magnesium, zirconium, and nickel is used as the metal element.

14. The method for manufacturing a semiconductor device according to claim 9, wherein one or more selected from the group consisting of phosphorus, arsenic, antimony, boron, aluminum, nitrogen, argon, helium, neon, indium, fluorine, chlorine, titanium, and zinc is used as the dopant.

15. The method for manufacturing a semiconductor device according to claim 9, wherein a heat treatment by which hydrogen or moisture is eliminated from the oxide semiconductor film is performed on the oxide semiconductor film before the forming of the film including the metal element.

16. The method for manufacturing a semiconductor device according to claim 15, wherein oxygen is added to the oxide semiconductor film after the heat treatment by which hydrogen or moisture is eliminated from the oxide semiconductor film.

17. The method for manufacturing a semiconductor device according to claim 9, wherein the dopant is added to the oxide semiconductor film by adding a single ion of the dopant or a hydride ion, a fluoride ion, or a chloride ion thereof.

18. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film;

forming a stack of a gate insulating film and a gate electrode layer over the oxide semiconductor film;

forming a film including a metal element to be in contact with part of the oxide semiconductor film over the oxide semiconductor film, the gate insulating film, and the gate electrode layer;

heating the oxide semiconductor film and the film including the metal element to add the metal element to the oxide semiconductor film from the film including the metal element; and

adding a dopant to the oxide semiconductor film including the metal element through the film including the metal element with the gate insulating film and the gate electrode layer used as a mask, so that low-resistance regions whose resistance is lower than a resistance of a channel formation region in the oxide semiconductor film are formed in the oxide semiconductor film,

wherein the channel formation region overlaps with the gate electrode layer,

wherein the channel formation region is between the low-resistance regions, and

wherein the low-resistance regions include the metal element and the dopant.

19. The method for manufacturing a semiconductor device according to claim 18, further comprising a step of removing the film including the metal element after forming the low-resistance regions.

20. The method for manufacturing a semiconductor device according to claim 18, wherein the film including the metal element is made to be a metal oxide insulating film by the heating of the oxide semiconductor film.

21. The method for manufacturing a semiconductor device according to claim 18, wherein a source electrode layer and a drain electrode layer are formed in contact with the oxide semiconductor film.

22. The method for manufacturing a semiconductor device according to claim 18, wherein one or more selected from the group consisting of aluminum, titanium, molybdenum, tungsten, hafnium, tantalum, lanthanum, barium, magnesium, zirconium, and nickel is used as the metal element.

23. The method for manufacturing a semiconductor device according to claim 18, wherein one or more selected from the group consisting of phosphorus, arsenic, antimony, boron, aluminum, nitrogen, argon, helium, neon, indium, fluorine, chlorine, titanium, and zinc is used as the dopant.

24. The method for manufacturing a semiconductor device according to claim 18, wherein a heat treatment by which hydrogen or moisture is eliminated from the oxide semiconductor film is performed on the oxide semiconductor film before the forming of the film including the metal element.

25. The method for manufacturing a semiconductor device according to claim 24, wherein oxygen is added to the oxide semiconductor film after the heat treatment by which hydrogen or moisture is eliminated from the oxide semiconductor film.

26. The method for manufacturing a semiconductor device according to claim 18, wherein the dopant is added to the oxide semiconductor film by adding a single ion of the dopant or a hydride ion, a fluoride ion, or a chloride ion thereof.