METHOD FOR PRODUCING CONTACT OPENINGS IN A SEMICONDUCTOR BODY AND SELF-ALIGNED CONTACT STRUCTURES ON A SEMICONDUCTOR BODY
First Claim
1. A method for producing contact openings in a semiconductor body, the method comprising:
- forming a plurality of self-aligned structures on a main surface of a semiconductor body, each self-aligned structure filling a trench formed in the semiconductor body and extending above and onto the main surface, adjacent ones of the self-aligned structures having spaced apart sidewalls which face each other;
forming a spacer layer on the sidewalls of the self-aligned structures; and
forming openings in the semiconductor body between adjacent ones of the self-aligned structures while the spacer layer is on the sidewalls of the self-aligned structures so that each opening has a width and a distance to the sidewall of an adjacent trench which corresponds to a thickness of the spacer layer.
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Abstract
Contact openings are produced in a semiconductor body by forming a plurality of self-aligned structures on a main surface of a semiconductor body, each self-aligned structure filling a trench formed in the semiconductor body and extending above and onto the main surface. Adjacent ones of the self-aligned structures have spaced apart sidewalls which face each other. A spacer layer is formed on the sidewalls of the self-aligned structures. Openings are formed in the semiconductor body between adjacent ones of the self-aligned structures while the spacer layer is on the sidewalls of the self-aligned structures. Each opening has a width and a distance to the sidewall of an adjacent trench which corresponds to a thickness of the spacer layer. Self-aligned contact structures can also be produced on a semiconductor body, with or without using the spacer layer.
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Citations
20 Claims
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1. A method for producing contact openings in a semiconductor body, the method comprising:
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forming a plurality of self-aligned structures on a main surface of a semiconductor body, each self-aligned structure filling a trench formed in the semiconductor body and extending above and onto the main surface, adjacent ones of the self-aligned structures having spaced apart sidewalls which face each other; forming a spacer layer on the sidewalls of the self-aligned structures; and forming openings in the semiconductor body between adjacent ones of the self-aligned structures while the spacer layer is on the sidewalls of the self-aligned structures so that each opening has a width and a distance to the sidewall of an adjacent trench which corresponds to a thickness of the spacer layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for producing self-aligned contact structures on a semiconductor body, the method comprising:
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forming a plurality of trenches extending from a main surface of a semiconductor body into the semiconductor body; forming a conductive plate in a lower part of the trenches and insulated from the semiconductor body; forming a first material on the main surface and on the conductive plates in the trenches, the first material having recessed regions over the trenches; filling the recessed regions of the first material with a second material; forming openings in the first material which extend to the main surface over island regions of the semiconductor body between adjacent ones of the trenches to form a plurality of spaced apart self-aligned structures including the second material in the recessed regions of the first material; forming grooves in the semiconductor body between adjacent ones of the self-aligned structures; and filling the grooves and open gaps between adjacent ones of the self-aligned structures with a material having a different etch selectivity than the first and second materials. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification