METHOD FOR PRODUCING CIRCUIT BOARD, CIRCUIT BOARD AND DISPLAY DEVICE

• US 20120319104A1
• Filed: 11/04/2010
• Published: 12/20/2012
• Est. Priority Date: 02/23/2010
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Hara, Yoshihito, Nakata, Yukinobu
• Application Number:
  US13/579,286
• Publication Number:
  US 20120319104A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs

Abstract

Provided is a method of producing a circuit board of which the aperture ratio is increased. The method of producing a circuit board of the present invention is a method of producing a circuit board that includes a thin film transistor, the thin film transistor including an oxide semiconductor layer, the method including steps of: forming the oxide semiconductor layer; and converting the oxide semiconductor layer into a conductive form.

Claims

1. A method of producing a circuit board that carries a thin film transistor, the thin film transistor including an oxide semiconductor layer,

the method comprising steps of:

forming the oxide semiconductor layer; and

converting the oxide semiconductor layer into a conductive form.

2. A circuit board obtainable by the method of producing the circuit board according to claim 1.

4. The circuit board according to claim 2,

wherein the oxide semiconductor layer is formed of an indium-gallium-zinc complex oxide.

5. The circuit board according to claim 2,

wherein the circuit board is configured so that a lower layer of the oxide semiconductor layer is formed of an insulating film, and

an upper layer of a conductive portion of the oxide semiconductor layer is configured with an insulating film.

6. The circuit board according to claim 2,

wherein the circuit board is configured so that a drain formed of a source metal and a gate wire line do not overlap each other in a thin film transistor element portion as the principal surface of the board is seen in a plan view.

7. The circuit board according to claim 2,

wherein the oxide semiconductor layer includes a portion of which the resistivity is equal to or higher than 10² μ

Ω

·

cm but equal to or lower than 10⁸ μ

Ω

·

cm.

8. The circuit board according to claim 7,

wherein the oxide semiconductor layer further includes a portion of which the resistivity is higher than 10⁸ μ

Ω

·

cm.

9. The circuit board according to claim 2,

wherein the circuit board comprises two or more thin film transistor elements that are disposed in series per electrode of a picture element.

10. The circuit board according to claim 2,

wherein the circuit board includes a portion where the thin film transistor element and a light-shielding layer do not overlap each other as the principal surface of the board is seen in a plan view.

11. A display device comprising the circuit board according to claim 2.

3. A circuit board that carries a thin film transistor, the thin film transistor including an oxide semiconductor layer,

wherein the oxide semiconductor layer includes a portion of which the surface is converted into a conductive form and a portion of a semiconductor layer.