SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
Patent Images
1. A semiconductor device comprising:
- an oxide semiconductor layer over an insulating surface, wherein the oxide semiconductor layer including a first region and a pair of second regions with the first region interposed therebetween;
a gate insulating layer over the oxide semiconductor layer; and
a gate electrode layer over the gate insulating layer,wherein a source region and a drain region are formed in the pair of second regions,wherein the first region is thinner than the pair of second regions andwherein the first region includes a channel formation region overlapping with the gate electrode layer.
1 Assignment
0 Petitions
Accused Products
Abstract
At least part of the oxide semiconductor layer which serves as the channel formation region is thinned by etching and the thickness of the channel formation region is adjusted by the etching. Further, a dopant containing phosphorus (P) or boron (B) is introduced into a thick region of the oxide semiconductor layer to form a source region and a drain region in the oxide semiconductor layer, so that the contact resistance between the source and drain regions and the channel formation region which are connected to each other is reduced.
43 Citations
23 Claims
-
1. A semiconductor device comprising:
-
an oxide semiconductor layer over an insulating surface, wherein the oxide semiconductor layer including a first region and a pair of second regions with the first region interposed therebetween; a gate insulating layer over the oxide semiconductor layer; and a gate electrode layer over the gate insulating layer, wherein a source region and a drain region are formed in the pair of second regions, wherein the first region is thinner than the pair of second regions and wherein the first region includes a channel formation region overlapping with the gate electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A semiconductor device comprising:
-
an oxide semiconductor layer over an insulating surface, wherein the oxide semiconductor layer including a first region and a pair of second regions with the first region interposed therebetween; a gate insulating layer over the oxide semiconductor layer; and a gate electrode layer over the gate insulating layer, wherein a source region and a drain region are formed in the pair of second regions, and wherein the first region is thinner than the pair of second regions, wherein the first region includes a channel formation region and a low-resistance region having lower resistance than the channel formation region, wherein the channel formation region overlaps with the gate electrode layer, and wherein the low-resistance region includes phosphorus or boron. - View Dependent Claims (10, 11, 12, 13, 14, 15)
-
-
16. A method for manufacturing a semiconductor device comprising the steps of:
-
forming an oxide semiconductor layer over an insulating surface; forming a mask over the oxide semiconductor layer; selectively etching the oxide semiconductor layer with the use of the mask to form a first region and a pair of second regions in the oxide semiconductor layer with the first region interposed between the pair of second regions, wherein the first region is thinner than the pair of second regions; forming a gate insulating layer over the oxide semiconductor layer; and forming a gate electrode layer overlapping with the first region over the gate insulating layer. - View Dependent Claims (17, 18, 19)
-
-
20. A method for manufacturing a semiconductor device comprising the steps of:
-
forming a stack of an oxide semiconductor layer and a metal layer over an insulating surface; forming a mask over the metal layer; removing part of the metal layer with the use of the mask; selectively etching the oxide semiconductor layer with the use of the metal layer as a mask to form a first region and a pair of second regions in the oxide semiconductor layer with the first region interposed between the pair of second regions, wherein the first region is thinner than the pair of second regions; forming a gate insulating layer over the metal layer and the oxide semiconductor layer; and forming a gate electrode layer overlapping with the first region, over the gate insulating layer. - View Dependent Claims (21, 22, 23)
-
Specification