Light-Emitting Device Structure and Method for Manufacturing the Same

• US 20120319149A1
• Filed: 09/13/2011
• Published: 12/20/2012
• Est. Priority Date: 06/17/2011
• Status: Abandoned Application

• Current Assignee: National Cheng KUNG University (Government of The Republic of China)
• Original Assignee: National Cheng KUNG University (Government of The Republic of China)
• Inventors: Su, Yan-Kuin, Chen, Kuan-Chun, Lin, Chun-Liang
• Application Number:
  US13/230,917
• Publication Number:
  US 20120319149A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A light-emitting device structure and a method for manufacturing the same are described. The light-emitting device structure includes a substrate and an illuminant structure. The substrate has a top surface and a lower surface on opposite sides, and two inclined side surfaces on opposite sides. Two sides of each inclined side surface are respectively connected to the top surface and the lower surface. The illuminant structure is disposed on the top surface.

Claims

1. A light-emitting device structure, includes:

a substrate having a top surface and a lower surface on opposite sides, and two inclined side surfaces on opposite sides, wherein two sides of each of the inclined side surfaces are respectively connected to the top surface and the lower surface; and

an illuminant structure disposed on the top surface.

2. The light-emitting device structure according to claim 1, wherein an inclined angle of each of the inclined side surfaces ranges from 0.5 degree to 89.5 degrees.

3. The light-emitting device structure according to claim 1, wherein a width of the substrate is gradually increased from the top surface to the lower surface.

4. The light-emitting device structure according to claim 1, wherein a width of the substrate is gradually decreased from the top surface to the lower surface.

5. The light-emitting device structure according to claim 1, wherein the light-emitting device structure is a light-emitting diode.

6. The light-emitting device structure according to claim 1, wherein each of the inclined side surfaces is a rough surface.

7. A method for manufacturing a light-emitting device structure, including:

providing a main substrate, wherein the main substrate has a top surface and a lower surface on opposite sides;

forming a plurality of illuminant structures on the top surface;

performing a dicing treatment on the main substrate between the adjacent illuminant structures by a plurality of laser beams to form a trench in the main substrate between the adjacent illuminant structures respectively; and

performing a splitting step to split the main substrate along the trenches to form a plurality of light-emitting device structures, wherein each of the light-emitting device structures includes a substrate formed by dicing the main substrate, and each of the substrates has two inclined side surfaces on opposite sides.

8. The method for manufacturing a light-emitting device structure according to claim 7, wherein a pitch of the laser beams ranges from 0.1 μ

m to 100 mm.

9. The method for manufacturing a light-emitting device structure according to claim 7, wherein energy of each of the laser beams ranges from 1 μ

W to 100 W.

10. The method for manufacturing a light-emitting device structure according to claim 7, wherein a focus depth of each of the laser beams ranges from 0.1 nm to 10 mm.

11. The method for manufacturing a light-emitting device structure according to claim 7, wherein each of the trenches is U-shaped.

12. The method for manufacturing a light-emitting device structure according to claim 7, wherein each of the trenches is V-shaped.

13. The method for manufacturing a light-emitting device structure according to claim 7, wherein an inclined angle of each of the inclined side surfaces ranges from 0.5 degree to 89.5 degrees.

14. The method for manufacturing a light-emitting device structure according to claim 7, wherein each of the substrates has a top surface and a lower surface on opposite sides, and a width of each of the substrates is gradually increased from the top surface to the lower surface of the substrate.

15. The method for manufacturing a light-emitting device structure according to claim 7, wherein each of the substrates has a top surface and a lower surface on opposite sides, and a width of each of the substrates is gradually decreased from the top surface to the lower surface of the substrate.

16. The method for manufacturing a light-emitting device structure according to claim 7, wherein the dicing treatment is performed on the top surface of the main substrate.

17. The method for manufacturing a light-emitting device structure according to claim 7, wherein the dicing treatment is performed on the lower surface of the main substrate.

18. The method for manufacturing a light-emitting device structure according to claim 7, wherein each of the laser beams passes through the main substrate.

19. The method for manufacturing a light-emitting device structure according to claim 7, wherein each of the laser beams does not pass through the main substrate.

20. The method for manufacturing a light-emitting device structure according to claim 7, wherein each of the laser beams forms a hole or a ragged structure at a focus of the laser beam or a region adjacent to the focus in the main substrate during the dicing treatment.