FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES
First Claim
1. A structure comprising a monolithically integrated trench field-effect transistor (FET) and Schottky diode, the structure further comprising:
- a first gate trench extending into a semiconductor region;
a second gate trench extending into the semiconductor region;
a source region flanking a side of the first gate trench, the source region having a substantially triangular shape;
a contact opening extending into the semiconductor region between the first gate trench and the second gate trench; and
a conductor layer disposed in the contact opening to electrically contact the source region along at least a portion of a slanted sidewall of the source region, and the semiconductor region along a bottom portion of the contact opening, the conductor layer forming a Schottky contact with the semiconductor region.
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Accused Products
Abstract
In accordance with an embodiment a structure can include a monolithically integrated trench field-effect transistor (FET) and Schottky diode. The structure can include a first gate trench extending into a semiconductor region, a second gate trench extending into the semiconductor region, and a source region flanking a side of the first gate trench. The source region can have a substantially triangular shape, and a contact opening extending into the semiconductor region between the first gate trench and the second gate trench. The structure can include a conductor layer disposed in the contact opening to electrically contact the source region along at least a portion of a slanted sidewall of the source region, and the semiconductor region along a bottom portion of the contact opening. The conductor layer can form a Schottky contact with the semiconductor region.
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Citations
52 Claims
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1. A structure comprising a monolithically integrated trench field-effect transistor (FET) and Schottky diode, the structure further comprising:
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a first gate trench extending into a semiconductor region; a second gate trench extending into the semiconductor region; a source region flanking a side of the first gate trench, the source region having a substantially triangular shape; a contact opening extending into the semiconductor region between the first gate trench and the second gate trench; and a conductor layer disposed in the contact opening to electrically contact the source region along at least a portion of a slanted sidewall of the source region, and the semiconductor region along a bottom portion of the contact opening, the conductor layer forming a Schottky contact with the semiconductor region. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A structure comprising a monolithically integrated trench field-effect transistor (FET) and Schottky diode, the structure further comprising:
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a gate trench extending into a semiconductor region of a first conductivity type; a source region of the first conductivity type disposed on a side of the gate trench; a shield electrode disposed in a bottom portion of the gate trench, the shield electrode being insulated from the semiconductor region by a shield dielectric layer; a gate disposed over the shield electrode in the gate trench, the gate electrode and the shield electrode having a inter-electrode dielectric layer therebetween; a dielectric cap over the gate; and a conductor layer contacting the source region and the semiconductor region such that the conductor layer forms a Schottky contact with the semiconductor region. - View Dependent Claims (8, 9, 10)
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11-31. -31. (canceled)
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32. A structure comprising a monolithically integrated trench field-effect transistor (FET) and Schottky diode, the structure further comprising:
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a gate trench extending into a semiconductor region of a first conductivity type, the gate trench having a recessed gate therein with a dielectric material disposed on the recessed gate; a source region of the first conductivity type disposed on a side of the gate trench, the source region having an upper surface recessed relative to an upper surface of the dielectric material disposed on the recessed gate; a body region of a second conductivity type extending along a sidewall of the gate trench between the source region and the semiconductor region; a contact opening extending into the semiconductor region; and a conductor layer disposed in the contact opening and electrically contacting the source region, the body region, and the semiconductor region, the conductor layer forming a Schottky contact with at least a portion of the semiconductor region. - View Dependent Claims (33, 34, 35, 36, 37)
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38. A structure comprising a monolithically integrated trench FET and Schottky diode, the structure further comprising:
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an epitaxial layer disposed on a substrate; a gate trench extending into and terminating within the epitaxial layer, the gate trench having a recessed gate disposed therein and a dielectric material disposed on the recessed gate; a source region disposed on a side of the gate trench; a contact opening extending into the epitaxial layer; and a conductor layer disposed in the contact opening and electrically contacting the source region and the epitaxial layer, the conductor layer forming a Schottky contact with the epitaxial layer. - View Dependent Claims (39, 40, 41, 42, 43, 44, 45)
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46. A structure, comprising:
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a gate trench extending into a semiconductor region, the gate trench having a gate disposed therein with a dielectric material disposed on the gate; a semiconductor source spacer disposed on a side of the gate trench such that the semiconductor source spacer located between the gate trench forming at least a portion of a contact opening; and a conductor layer disposed in the contact opening and contacting the semiconductor source spacer and the semiconductor region, the conductor layer forming a Schottky contact with the semiconductor region. - View Dependent Claims (47, 48, 49, 50, 51, 52)
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Specification