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FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES

  • US 20120319197A1
  • Filed: 08/30/2012
  • Published: 12/20/2012
  • Est. Priority Date: 04/06/2005
  • Status: Active Grant
First Claim
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1. A structure comprising a monolithically integrated trench field-effect transistor (FET) and Schottky diode, the structure further comprising:

  • a first gate trench extending into a semiconductor region;

    a second gate trench extending into the semiconductor region;

    a source region flanking a side of the first gate trench, the source region having a substantially triangular shape;

    a contact opening extending into the semiconductor region between the first gate trench and the second gate trench; and

    a conductor layer disposed in the contact opening to electrically contact the source region along at least a portion of a slanted sidewall of the source region, and the semiconductor region along a bottom portion of the contact opening, the conductor layer forming a Schottky contact with the semiconductor region.

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