WAVELENGTH CONVERSION MEMBER, LIGHT EMITTING DEVICE AND IMAGE DISPLAY DEVICE, AND METHOD FOR MANUFACTURING WAVELENGTH CONVERSION MEMBER

• US 20120320607A1
• Filed: 02/25/2011
• Published: 12/20/2012
• Est. Priority Date: 03/03/2010
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Kinomoto, Junichi, Ryowa, Tatsuya
• Granted Patent: US 8,882,299 B2
• Time in Patent Office: Days
• US Class Current: 362/351
• CPC Class Codes: G02F 1/133614 using photoluminescence, e.g. phosphors illuminated by UV or blue light
• CPC Class Codes: G02F 1/133621 providing coloured light G02F1/133617, G02F1/133533 take precedence
• CPC Class Codes: G02F 2202/102 In×P and alloy
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H10K 2102/331 Nanoparticles used in non-emissive layers, e.g. in packaging layer
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

Disclosed is a wavelength conversion member that is provided with: a light transmissive member including a light input plane into which excitation light is inputted, and a light output plane from which wavelength converted light is outputted; and a semiconductor fine particle phosphor, which is dispersed in the light transmissive member, and which absorbs the excitation light, converts the wavelength, and emits light. The dispersion concentration of the semiconductor fine particle phosphor in the direction parallel to the light traveling direction, i.e., the direction connecting the light input plane and the light output plane, is lower than the dispersion concentration of the semiconductor fine particle phosphor in the direction orthogonal to the light traveling direction.

Claims

1. A wavelength conversion member comprising:

a light transmissive member including a light input plane into which light is inputted, and a light output plane from which light is outputted; and

a semiconductor fine particle phosphor dispersed inside said light transmissive member, for absorbing excitation light and emitting light after converting wavelength of the same,

wherein dispersion concentration of said semiconductor fine particle phosphor in a direction, which connects said light input plane and said light output plane, parallel to a light traveling direction is lower than dispersion concentration of said semiconductor fine particle phosphor in a direction orthogonal to said light traveling direction.

2. The wavelength conversion member according to claim 1, wherein said semiconductor fine particle phosphor is regularly arrayed in a plane that is orthogonal to said light traveling direction.

3. The wavelength conversion member according to claim 2, wherein said semiconductor fine particle phosphor is packed in the form of hexagonal lattice in a plane that is orthogonal to said light traveling direction.

6. The wavelength conversion member according to claim 1, wherein as said semiconductor fine particle phosphor, a plurality of kinds of semiconductor fine particle phosphors having different emission wavelengths are contained.

7. The wavelength conversion member according to claim 6, wherein said plurality of kinds of semiconductor fine particle phosphors having different emission wavelengths are arranged in the form of layers along said light traveling direction while they are separated by kind.

8. The wavelength conversion member according to claim 7, wherein respective layers of the plurality of kinds of semiconductor fine particle phosphors arranged in the form of layers while they are separated by kind are arrayed so that emission wavelength of the semiconductor fine particle phosphor contained in each layer decreases from the side of said light input plane to the side of said light output plane.

11. The wavelength conversion member according to claim 1, wherein absorbance per 1 μ

m along said light traveling direction is greater than or equal to 0.02.

12. The wavelength conversion member according to claim 1, having a thickness along said light traveling direction of greater than or equal to 0.5 nm and less than or equal to 50 μ

m, and absorbing greater than or equal to 90% of inputted excitation light and converting wavelength of the same.

14. The wavelength conversion member according to claim 1, wherein said semiconductor fine particle phosphor has a core part formed of a semiconductor material, and a shell part that covers the core part, and is formed of a material different from that of the core part, and

said core part is formed of a III-V group compound semiconductor material.

15. The wavelength conversion member according to claim 1, wherein said semiconductor fine particle phosphor has a core part formed of a semiconductor material, and a shell part that covers the core part, and is formed of a material different from that of the core part, and

said core part is formed of a material selected from the group consisting of InP, InN, mixed crystal of InP and mixed crystal of InN.

4-5. -5. (canceled)

9-10. -10. (canceled)

13. (canceled)

16-29. -29. (canceled)

30. A wavelength conversion member comprising:

a wavelength conversion layer including a light input plane into which light is inputted, and a light output plane from which light is outputted; and

a semiconductor fine particle phosphor situated in said wavelength conversion layer, for absorbing excitation light and emitting light after converting wavelength of the same,

wherein said wavelength conversion layer is constituted by an aggregate of said semiconductor fine particle phosphor, and

a number of particles of said semiconductor fine particle phosphor in a direction, which connects said light input plane and said light output plane, parallel to a light traveling direction is smaller than a number of particles of said semiconductor fine particle phosphor in a direction orthogonal to said light traveling direction.

32. The wavelength conversion member according to claim 30, wherein said semiconductor fine particle phosphor is laminated plurally in a direction parallel to said light traveling direction, and

said semiconductor fine particle phosphor is regularly arrayed in a plane that is orthogonal to said light traveling direction.

33. The wavelength conversion member according to claim 32, wherein said semiconductor fine particle phosphor is packed in the form of hexagonal lattice in a plane that is orthogonal to said light traveling direction.

35. The wavelength conversion member according to claim 30, wherein as said semiconductor fine particle phosphor, a plurality of kinds of semiconductor fine particle phosphors having different emission wavelengths are contained.

36. The wavelength conversion member according to claim 35, wherein said plurality of kinds of semiconductor fine particle phosphors having different emission wavelengths are arranged in the form of layers along said light traveling direction while they are separated by kind.

37. The wavelength conversion member according to claim 36, wherein respective layers of the plurality of kinds of semiconductor fine particle phosphors arranged in the form of layers while they are separated by kind are arrayed so that emission wavelength of the semiconductor fine particle phosphor contained in each layer decreases from the side of said light input plane to the side of said light output plane.

40. The wavelength conversion member according to claim 30, wherein absorbance per 1 μ

m along said light traveling direction is greater than or equal to 0.02.

41. The wavelength conversion member according to claim 30, having a thickness along said light traveling direction of greater than or equal to 0.5 nm and less than or equal to 50 μ

m, and absorbing greater than or equal to 90% of inputted excitation light and converting wavelength of the same.

43. The wavelength conversion member according to claim 30, wherein said semiconductor fine particle phosphor has a core part formed of a semiconductor material, and a shell part that covers the core part, and is formed of a material different from that of the core part, and

said core part is formed of a III-V group compound semiconductor material.

44. The wavelength conversion member according to claim 30, wherein said semiconductor fine particle phosphor has a core part formed of a semiconductor material, and a shell part that covers the core part, and is formed of a material different from that of the core part, and

said core part is formed of a material selected from the group consisting of InP, InN, mixed crystal of InP and mixed crystal of InN.

31. (canceled)

34. (canceled)

38-39. -39. (canceled)

42. (canceled)

45-59. -59. (canceled)