NONVOLATILE STATIC RANDOM ACCESS MEMORY CELL AND MEMORY CIRCUIT
First Claim
1. A non-volatile static random access memory cell, comprising:
- a static random access circuit, having a first terminal and a second terminal respectively having a first voltage and a second voltage, wherein stored data is determined by the first voltage and the second voltage;
a first storage device, having a first connection terminal and a second connection terminal, wherein the first connection terminal of the first storage device is coupled to the first terminal of the static random access circuit;
a second storage device, having a first connection terminal and a second connection terminal, wherein the first connection terminal of the second storage device is coupled to the second terminal of the static random access circuit; and
a switch unit, respectively coupled to the second connection terminal of the first storage device and the second connection terminal of the second storage device, wherein the switch unit is turned on/off in response to a switching signal, and when the switch unit is turned on, the two second connection terminals are conducted to a bit line or a complementary bit line corresponding to the bit line.
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Accused Products
Abstract
A non-volatile static random access memory (NVSRAM) cell including a static random access circuit, first storage device, a second storage device, and a switch unit is provided. The static random access circuit has a first terminal and a second terminal respectively having a first voltage and a second voltage. Stored data in the first storage device and the second storage device are determined by the first voltage and the second voltage. The first storage device and the second storage device respectively have a first connection terminal and a second connection terminal. The switch unit is respectively coupled to the second connection terminals of the first storage device and the second storage device, and is controlled by a switching signal of a switch line to conduct the first storage device and the second storage device to a same bit line or a same complementary bit line.
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Citations
16 Claims
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1. A non-volatile static random access memory cell, comprising:
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a static random access circuit, having a first terminal and a second terminal respectively having a first voltage and a second voltage, wherein stored data is determined by the first voltage and the second voltage; a first storage device, having a first connection terminal and a second connection terminal, wherein the first connection terminal of the first storage device is coupled to the first terminal of the static random access circuit; a second storage device, having a first connection terminal and a second connection terminal, wherein the first connection terminal of the second storage device is coupled to the second terminal of the static random access circuit; and a switch unit, respectively coupled to the second connection terminal of the first storage device and the second connection terminal of the second storage device, wherein the switch unit is turned on/off in response to a switching signal, and when the switch unit is turned on, the two second connection terminals are conducted to a bit line or a complementary bit line corresponding to the bit line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification