FORCE SENSING DEVICE AND FORCE SENSING SYSTEM

• US 20120325019A1
• Filed: 10/24/2011
• Published: 12/27/2012
• Est. Priority Date: 06/21/2011
• Status: Abandoned Application

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Shau, Yio-Wha, Li, Arvin Huang-Te, Gu, Gaung-Hui, Hwang, Bai-Kuang, Lin, Jen-Chieh
• Application Number:
  US13/279,664
• Publication Number:
  US 20120325019A1
• Time in Patent Office: Days
• US Class Current: 73/862.59
• CPC Class Codes: A61B 2562/0252 Load cells
• CPC Class Codes: A61B 2562/066 in a matrix array
• CPC Class Codes: A61B 5/1036 Measuring load distribution, e.g. podologic studies
• CPC Class Codes: A61B 5/1117 Fall detection
• CPC Class Codes: A61B 5/4029 for evaluating the peripheral nervous systems A61B5/24 takes precedence
• CPC Class Codes: A61B 5/6807 Footwear
• CPC Class Codes: G01L 1/122 by using permanent magnets

Abstract

A force sensing device and a force sensing system are provided. The force sensing device comprises at least one magnetic material layer and a force sensing layer which can move with respect to each other. The force sensing layer comprises two sensing elements. The first sensing element, disposed along a first axis of the magnetic material layer, generates a sensing signal varying with a first lateral force applied on the force sensing device. The first lateral force enables the first sensing element to move relatively with respect to the magnetic material layer along the first axis. The second sensing element, disposed along a second axis of the magnetic material layer, generates a sensing signal varying with a second lateral force applied on the force sensing device. The second lateral force enables the second sensing element to move relatively with respect to the magnetic material layer along the second axis.

Claims

1. A force sensing device, comprising:

at least one magnetic material layer; and

at least one force sensing layer which is moveable relative to the magnetic material layer, wherein the force sensing layer comprises;

a first sensing element disposed along a first axis of the magnetic material layer, wherein the first sensing element is moveable relative to the magnetic material layer for generating a signal representing a first lateral force; and

a second sensing element disposed along a second axis of the magnetic material layer, wherein the second sensing element is moveable relative to the magnetic material layer for generating another signal representing a second lateral force.

2. The force sensing device according to claim 1, wherein the force sensing layer further comprises:

a third sensing element disposed along a third axis of the magnetic material layer, wherein the third sensing element generates a normal force when being pressed.

3. The force sensing device according to claim 1, further comprising:

another magnetic material layer, wherein the force sensing layer is disposed inside or outside the two magnetic material layers.

4. The force sensing device according to claim 3, wherein the force sensing layer further comprises:

a third sensing element disposed along a third axis of the magnetic material layer, wherein the third sensing element generates a normal force when being pressed.

5. The force sensing device according to claim 1, wherein the first sensing element and the second sensing element are located on the same side or different sides of the same magnetic material layer.

6. The force sensing device according to claim 1, wherein the magnetic material layer is a single-layered or a multi-layered stack structure.

7. The force sensing device according to claim 1, wherein the first sensing element and the second sensing element comprise wires, conductors, and coils.

8. The force sensing device according to claim 1, further comprising:

a detector for detecting voltage variation or current variation induced when the first lateral force or the second lateral force causes a change in magnetic field.

9. The force sensing device according to claim 2, wherein the third sensing element comprises a piezoelectric material.

10. The force sensing device according to claim 9, wherein the piezoelectric material comprises ceramic materials such as barium titanate (BaTiO₃), lead zirconate titanate (PZT), single crystal materials of quartz (crystal), tourmaline, Rochelle salt (or potassium sodium tartrate), tantalates, and niobate, or thin-film materials of zinc oxide (ZnO).

11. The force sensing device according to claim 2, wherein the normal force is a measurement obtained from voltage variation or current variation induced when the third sensing element is pressed.

12. The force sensing device according to claim 1, wherein the magnetic material layer comprises a permanent magnet, an inductance magnet or a magnetic metal.

13. The force sensing device according to claim 12, wherein the magnetic material layer comprises iron (Fe), cobalt (Co), nickel (Ni), cobalt nickel chromium alloy (Co—

Ni—

Cr), cobalt chromium tantalum alloy (Co—

Cr—

Ta), cobalt chromium platinum alloy (Co—

Cr—

Pt), cobalt chromium platinum boron alloy (Co—

Cr—

Pt—

B), iron terbium alloy (TbFe), gadolinium cobalt alloy (GdCo), dysprosium nickel alloy (DyNi), neodymium iron boron alloy (NdFeB) or a combination thereof.

14. A force sensing system, comprising:

at least one force sensing device, wherein the force sensing device comprises;

at least one magnetic material layer; and

at least one force sensing layer, which is moveable relative to the magnetic material layer, wherein the force sensing layer comprises;

a first sensing element disposed along a first axis of the magnetic material layer, wherein the first sensing element is moveable relative to the magnetic material layer for generating a signal representing a first lateral force; and

a second sensing element disposed along a second axis of the magnetic material layer, wherein the second sensing element is moveable relative to the magnetic material layer for generating a signal representing a second lateral force;

an analog signal amplifying and filtering unit coupled to the force sensing device for amplifying and filtering the generated signals;

a control unit coupled to the analog signal amplifying and filtering unit for converting and collecting the amplified and filtered signals; and

an output unit coupled to the control unit for receiving the collected signals and outputting the received signals.

15. The force sensing system according to claim 14, wherein the force sensing layer further comprises:

a third sensing element disposed along a third axis of the magnetic material layer, wherein the third sensing element generates a normal force when being pressed.

16. The force sensing system according to claim 14, wherein the first sensing element and the second sensing element comprises wires, conductors, and coils.

17. The force sensing system according to claim 15, wherein the third sensing element comprises a piezoelectric material.

18. The force sensing system according to claim 14, wherein the sensing signal is a voltage signal or a current signal.

19. The force sensing system according to claim 14, further comprising:

a signal analyzing unit coupled to the output unit for receiving and analyzing the outputted signals.

20. The force sensing system according to claim 19, wherein the signal analyzing unit comprises a display unit for displaying analysis result.