LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE
First Claim
Patent Images
1. An annular chamber liner for a plasma chamber, comprising:
- a bottom wall; and
an outer wall sloping upwardly and outwardly from the bottom wall,wherein the annular chamber liner has a plurality of slots extending through the outer wall, and wherein the plurality of slots are arranged such that at least one slot is present within each quadrant of the annular chamber liner.
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Accused Products
Abstract
A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.
61 Citations
15 Claims
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1. An annular chamber liner for a plasma chamber, comprising:
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a bottom wall; and an outer wall sloping upwardly and outwardly from the bottom wall, wherein the annular chamber liner has a plurality of slots extending through the outer wall, and wherein the plurality of slots are arranged such that at least one slot is present within each quadrant of the annular chamber liner. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An apparatus for plasma processing, comprising:
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a chamber body; a first chamber liner disposed within the chamber body; and a second chamber liner disposed within the chamber body below the first chamber liner and electrically coupled to the first chamber liner, wherein the second chamber liner comprises; a bottom wall; and an outer wall sloping upwardly and outwardly from the bottom wall, wherein the second chamber liner has a plurality of slots extending through the outer wall, and wherein the plurality of slots are arranged such that at least one slot is present within each quadrant of the second chamber liner. - View Dependent Claims (8, 9, 10)
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11. A plasma processing apparatus, comprising:
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a chamber body; a substrate support pedestal disposed in the chamber body; a gas introduction showerhead disposed in the chamber opposite the substrate support; an upper chamber liner disposed in the chamber body such that the substrate support pedestal, the gas introduction showerhead, and the first chamber liner at least partially enclose a processing area; and a lower chamber liner disposed within the chamber body below the upper chamber liner and electrically coupled to the upper chamber liner, wherein the lower chamber liner comprises; a bottom wall; and an outer wall sloping upwardly and outwardly from the bottom wall, wherein the second chamber liner has a plurality of slots extending through the outer wall, and wherein the plurality of slots are arranged such that at least one slot is present within each quadrant of the second chamber liner. - View Dependent Claims (12, 13, 14, 15)
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Specification