DISPLAY PIXEL HAVING OXIDE THIN-FILM TRANSISTOR (TFT) WITH REDUCED LOADING
First Claim
1. A display device comprising:
- a liquid crystal display (LCD) panel comprising a plurality of display pixels arranged in rows and column, wherein each of the display pixels comprises;
a pixel electrode; and
a thin-film transistor (TFT) coupled to a source line and a gate line, wherein the TFT comprises a source, a channel, and a drain, and wherein the gate line comprises a first hole that is at least partially overlapped by the drain and configured to reduce parasitic capacitance by decreasing the area of the gate line.
2 Assignments
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Accused Products
Abstract
Disclosed embodiments relate to a thin-film transistor (TFT) for use in a display device. The display device may include a liquid crystal display (LCD) panel having multiple pixels arranged in rows and column, with each row corresponding to a gate line and each column corresponding to a source line. Each of the pixels includes a pixel electrode and a TFT. The TFT may include a metal oxide semiconductor channel between a source and drain. For each TFT, holes may be formed in the gate line in a region beneath the source and/or the drain. The holes may be formed such that the source and drain only partially overlap the holes. The presence of the holes reduces the area of the gate line, which may reduce parasitic capacitance and improve loading. This may provide improved panel performance, which may reduce the appearance of certain visual artifacts.
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Citations
13 Claims
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1. A display device comprising:
a liquid crystal display (LCD) panel comprising a plurality of display pixels arranged in rows and column, wherein each of the display pixels comprises; a pixel electrode; and a thin-film transistor (TFT) coupled to a source line and a gate line, wherein the TFT comprises a source, a channel, and a drain, and wherein the gate line comprises a first hole that is at least partially overlapped by the drain and configured to reduce parasitic capacitance by decreasing the area of the gate line. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing a thin-film transistor (TFT) for a display device, comprising:
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providing a substrate; forming a gate line over the substrate, wherein the gate line defines a gate for the TFT; forming at least one hole in the gate line, wherein forming the at least one hole comprises forming a first hole in a region of the gate line generally below where a drain of the TFT will be formed; forming a metal oxide active layer over the gate line; forming an etch stopper layer over the metal oxide active layer; forming a first hole and a second hole in the etch stopper layer; depositing conductive material over the first and second holes to form a source over first hole and a drain over the second hole; forming an organic passivation layer over the source and drain; etching a third hole in the organic passivation layer that exposes at least a portion of the drain; forming a common voltage electrode over the organic passivation layer and the exposed portion of the drain; etching a fourth hole in the common voltage electrode layer that exposes at least a portion of the organic passivation layer and the drain; forming a passivation layer over the common voltage electrode layer and the exposed portions of the organic passivation layer and the drain; and etching a fifth hole that exposes a portion of the drain; wherein the first hole is at least partially overlapped by the drain. - View Dependent Claims (6, 7, 8, 9)
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10. A display device comprising:
a liquid crystal display (LCD) panel comprising a plurality of display pixels arranged in rows and column, wherein each of the display pixels comprises; a pixel electrode; and a thin-film transistor (TFT) coupled to a source line and a gate line, wherein the gate line comprises a protrusion extending outwardly in a perpendicular direction, and wherein the TFT comprises; an L-shaped metal oxide active layer comprising a first portion that is parallel to the gate line and a second portion that is perpendicular to the gate line but parallel to the protrusion; a source formed at an end of the first portion of the L-shaped metal oxide active layer; and a drain formed at the end of the second portion of the L-shaped metal oxide active layer, wherein the protrusion is only partially overlapped by the drain. - View Dependent Claims (11, 12, 13)
Specification