Wafer Orientation Sensor
First Claim
1. A wafer orientation sensor, comprising:
- a laser source configured to emit a laser beam in a direction of a wafer in an evaluation region of the wafer orientation sensor so that the laser beam is reflected at a main surface of the wafer resulting in a reflected laser beam;
a laser detector configured to receive the reflected laser beam at least when the wafer is within a tolerance range; and
an evaluator configured to receive beam reception information from the laser detector and to determine wafer orientation information based on the beam reception information.
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Accused Products
Abstract
A wafer orientation sensor includes a laser source, a laser detector, and an evaluator. The laser source is configured to emit a laser beam in a direction of a wafer in an evaluation region of the wafer orientation sensor so that the laser beam is reflected at a main surface of the wafer resulting in a reflected laser beam. The laser detector is configured to receive the reflected laser beam at least when the wafer is within a tolerance range regarding the orientation of the wafer. The evaluator is configured to receive a beam reception information from the laser detector and to determine an orientation information based on the beam reception information.
29 Citations
27 Claims
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1. A wafer orientation sensor, comprising:
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a laser source configured to emit a laser beam in a direction of a wafer in an evaluation region of the wafer orientation sensor so that the laser beam is reflected at a main surface of the wafer resulting in a reflected laser beam; a laser detector configured to receive the reflected laser beam at least when the wafer is within a tolerance range; and an evaluator configured to receive beam reception information from the laser detector and to determine wafer orientation information based on the beam reception information. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A wafer orientation sensor comprising:
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a laser distance measuring device configured to measure a distance to a main surface of a wafer by emitting a laser beam and receiving a reflected laser beam when the wafer is placed in an evaluation region of the wafer orientation sensor; a comparator configured to compare the measured distance with a threshold distance value and to generate a comparison result; and a logic circuit configured to determine an orientation information on the basis of the comparison result. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A wafer orientation sensor comprising:
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a means for measuring a distance to a main surface of a wafer via an emission of a laser beam and a reception of a corresponding reflected laser beam, when the wafer is placed in an evaluation region of the wafer orientation sensor; a means for comparing a distance measure generated by the means for measuring a distance with a threshold distance value and to generate a comparison result; and a means for determining an orientation information on the basis of the comparison result.
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18. A method for determining an orientation of a wafer during a processing of the wafer, the method comprising:
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emitting a laser beam in a direction of the wafer within an evaluation area so that the laser beam is reflected at a main surface of the wafer resulting in a reflected laser beam; receiving the reflected laser beam and deriving beam reception information therefrom; determining an orientation information based on the beam reception information; and performing the processing of the wafer. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26)
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27. A method for checking an orientation of a wafer during a processing of the wafer, the method comprising:
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measuring a distance to a particular location on a main surface of the wafer by emitting a laser beam and receiving a corresponding reflected laser beam; comparing the distance with a threshold distance to obtain a comparison result; determining an orientation information on the basis of the comparison result; and performing the processing of the wafer.
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Specification