OVERVOLTAGE PROTECTION CIRCUIT

• US 20120327544A1
• Filed: 07/27/2011
• Published: 12/27/2012
• Est. Priority Date: 06/24/2011
• Status: Active Grant

• Current Assignee: Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd. (Hon Hai Precision Industry Co., Ltd.), Hon Hai Precision Industry Co., Ltd.
• Original Assignee: Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd. (Hon Hai Precision Industry Co., Ltd.), Hon Hai Precision Industry Co., Ltd.
• Inventors: PENG, XIAO-ZHAN, DENG, XUE-BING, LI, XIN-PING
• Granted Patent: US 8,493,701 B2
• Time in Patent Office: Days
• US Class Current: 361/91.5
• CPC Class Codes: H02H 3/066 Reconnection being a consequence of eliminating the fault which caused disconnection
• CPC Class Codes: H02H 3/20 responsive to excess voltage

Abstract

An overvoltage protection circuit includes a connection jack, a path connection module, a voltage response module, and a control module. The connection jack is connected to a power supply. The path connection module is connected between the connection jack and a load. The voltage response module is to output a first signal in response to an overvoltage, and output a second signal in response to a constant voltage. The control module is to output a corresponding potential according to the first signal to turn off the path connection module, and output a corresponding potential according to the second signal to turn on the path connection module. When the path connection module is turned off, the connection between the connection jack and the load is disabled, when the path connection module is turned on, the connection between the connection jack and the load is enabled.

Claims

1. An overvoltage protection circuit, comprising:

a connection jack for connecting to a power supply to receive power from the power supply;

a path connection module connected between the connection jack and a load;

a voltage response module to output a first signal when overvoltage occurs, and output a second signal when overvoltage disappears; and

a control module to output a corresponding potential according to the first signal to turn off the path connection module, and output a corresponding potential according to the second signal to turn on the path connection module;

wherein when the path connection module is turned off, the connection between the connection jack and the load is disabled, and when the path connection module is turned on, the connection between the connection jack and the load is enabled.

2. The overvoltage protection circuit as described in claim 1, wherein the voltage response module comprises a pnp bipolar junction transistor (BJT), a capacitor and a resistor, an emitter of the pnp BJT is connected to the capacitor and the anode of the power supply, a collector of the pnp BJT is connected to the control module, and the capacitor and the resistor are connected in parallel between a base of the pnp BJT and the emitter of the pnp BJT.

3. The overvoltage protection circuit as described in claim 2, wherein a terminal of the capacitor connected to the emitter of the pnp BJT is charged by the power supply when overvoltage occurs, the emitter voltage of the pnp BJT is higher than the base voltage of the pnp BJT, resulting the pnp BJT to be turned on, the voltage response module outputs a first signal.

4. The overvoltage protection circuit as described in claim 2, wherein a terminal of the capacitor connected to the base of the pnp BJT is charged by the power supply when the voltage of the terminal of the capacitor is charged to the voltage of the power supply until the voltage difference between the emitter of the pnp BJT and the base of the pnp BJT is less than the cut-in voltage of the pnp BJT, causing the pnp BJT to be turned off, the voltage response module outputs a second signal.

5. The overvoltage protection circuit as described in claim 1, wherein the control module comprises an npn BJT, a diode, and a resistor, the base of the npn BJT is connected to the voltage response module, the emitter of the npn BJT is grounded, and the collector is connected to the cathode of the diode, the anode of the diode is connected to the path connection module and connected to the anode of the power supply through the resistor.

6. The overvoltage protection circuit as described in claim 5, wherein when the voltage response module outputs a first signal, the base voltage of the npn BJT is higher than the emitter voltage of the npn BJT, resulting the npn BJT to be turned on, the cathode of the diode is grounded through the npn BJT to obtain a low voltage, the anode of the diode is connected to the anode of the power supply through the resistor, resulting in the diode turning on, the control module outputs a low voltage to the path connection module.

7. The overvoltage protection circuit as described in claim 5, wherein when the voltage response module outputs a second signal, the base voltage of the npn BJT is lower than the emitter voltage of the npn BJT, causing the npn BJT to be turned off, the anode of the diode is connected to the anode of the power supply through the resistor, the control module outputs a high voltage to the path connection module.

8. The overvoltage protection circuit as described in claim 1, wherein the path connection module comprises a npn BJT, a n-channel metal-oxide-semiconductor filed-effect transistor (NMOSFET), and a resistor, the base of the npn BJT is connected to the control module, the emitter of the npn BJT is grounded, and the collector of the npn BJT is connected to the gate of the NMOSFET, the gate of the NMOSFET is connected to the anode of the power supply through the resistor, the source of the NMOSFET is connected to the anode of the power supply, the drain of the NMOSFET is connected to the load.

9. The overvoltage protection circuit as described in claim 8, wherein when the control module outputs a low voltage to the path connection module, the base voltage of the npn BJT is lower than the emitter voltage of the npn BJT, causing the npn BJT to be turned off, the gate of the NMOSFET is connected to the anode of the power supply to obtain a high voltage through the resistor, causing the NMOSFET to be turned off.

10. The overvoltage protection circuit as described in claim 8, wherein when the control module outputs a high voltage to the path connection module, the base voltage of the npn BJT is higher than the emitter voltage of the npn BJT, resulting in the npn BJT turning on, the gate of the NMOSFET is grounded to obtain a low voltage through the conductive npn BJT, resulting in the NMOSFET turning on.

11. The overvoltage protection circuit as described in claim 1, wherein the voltage response module comprises a low voltage activated switch, a capacitor and a resistor;

the low voltage activated switch comprises a first terminal connected to the capacitor and the anode of the power supply, a second terminal connected to the control module, and a third terminal, and the capacitor and the resistor are connected in parallel between the first and the third terminals.

12. The overvoltage protection circuit as described in claim 11, wherein the low voltage activated switch is a pnp bipolar junction transistor (BJT), the first, second and third terminals are an emitter, a collector, and a base of the pnp BJT, respectively.

13. The overvoltage protection circuit as described in claim 1, wherein the control module comprises a high voltage activated switch, a diode, and a resistor, the high voltage activated switch comprises a first terminal connected to the voltage response module, a second terminal connected to the grounded, and a third terminal connected to the cathode of the diode, the anode of the diode is connected to the path connection module and connected to the anode of the power supply through the resistor.

14. The overvoltage protection circuit as described in claim 13, wherein the high voltage activated switch is a npn bipolar junction transistor (BJT), the first, second and third terminals are a base, an emitter, and a collector of the pnp BJT, respectively.

15. The overvoltage protection circuit as described in claim 1, wherein the path connection module comprises a first high voltage activated switch, a second high voltage activated switch, and a resistor, the first high voltage activated switch comprises a first terminal connected to the control module, a second terminal connected to ground, and a third terminal connected to the second high voltage activated switch, the second high voltage activated switch comprises a first terminal connected to the third terminal of the first high voltage activated switch and the anode of the power supply through the resistor, a second terminal connected to the anode of the power supply, and a third terminal connected to the load.

16. The overvoltage protection circuit as described in claim 15, wherein the first high voltage activated switch is a npn bipolar junction transistor (BJT), the first, second and third terminals are a base, an emitter, and a collector of the pnp BJT, respectively, the second high voltage activated switch is a n-channel metal-oxide-semiconductor filed-effect transistor (NMOSFET), the first, second and third terminals are a gate, a source, and a drain of the NMOSFET, respectively.