SEMICONDUCTOR DEVICE MOUNTING METHOD

• US 20120329182A1
• Filed: 10/26/2011
• Published: 12/27/2012
• Est. Priority Date: 03/28/2011
• Status: Abandoned Application

• Current Assignee: Panasonic Intellectual Property Management Co., Ltd. (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Intellectual Property Management Co., Ltd. (Panasonic Holdings Corporation)
• Inventors: Matsumori, Masashi, Sakai, Tadahiko, Kojio, Teppei, Ishikawa, Takatoshi
• Application Number:
  US13/512,955
• Publication Number:
  US 20120329182A1
• Time in Patent Office: Days
• US Class Current: 438/26
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/758 Means for moving parts
• CPC Class Codes: H01L 2224/75842 Rotational mechanism
• CPC Class Codes: H01L 2224/81 using a bump connector
• CPC Class Codes: H01L 2224/81002 being a removable or sacrificial coating
• CPC Class Codes: H01L 2224/81022 Cleaning the bonding area, e.g. oxide removal step, desmearing
• CPC Class Codes: H01L 2224/81024 Applying flux to the bonding area
• CPC Class Codes: H01L 2224/81026 Applying a precursor material to the bonding area
• CPC Class Codes: H01L 2224/81191 wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81205 Ultrasonic bonding
• CPC Class Codes: H01L 2224/81447 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/83205 Ultrasonic bonding
• CPC Class Codes: H01L 2224/83207 Thermosonic bonding
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 24/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2933/0066 : relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

When metal junction between a first electrode and a second electrode is executed as ultrasonic bonding between metals including at least copper, the ultrasonic bonding is performed in a state that a contact interface between the first electrode and the second electrode is covered with a bonding auxiliary agent. As a result, formation of oxide at a bonding interface between the first electrode and the second electrode due to execution of the ultrasonic bonding can be suppressed. Therefore, while a desired bonding strength is ensured, ultrasonic bonding with copper used for the first electrode or the second electrode can be fulfilled and cost cuts in mounting of semiconductor devices can be achieved.

Claims

1. A semiconductor device mounting method for performing ultrasonic bonding of a second electrode of a semiconductor device to a first electrode of a board placed on a board stage, the method comprising:

a bonding-auxiliary-agent feeding step for feeding a bonding auxiliary agent onto the first electrode or the second electrode, whichever at least one electrode is formed from copper; and

a ultrasonic bonding step for metal joining the first electrode and the second electrode by applying ultrasonic vibrations to the electrodes with the second electrode being pressed against the first electrode, wherein

in the ultrasonic bonding step, the bonding auxiliary agent keeps present at least in a periphery of a bonding interface between the first electrode and the second electrode at least until the first electrode and the second electrode are metal-joined.

2. The semiconductor device mounting method according to claim 1, wherein

the bonding auxiliary agent has reducibility, and

in the ultrasonic bonding step, the bonding interfaces between the first electrode and the second electrode is locally heated when the first electrode and the second electrode are metal-joined, so that the bonding auxiliary agent generates reductive reaction by utilizing the heat.

3. The semiconductor device mounting method according to claim 2, wherein

the first electrode of the board is formed from copper, and

in the bonding-auxiliary-agent feeding step, the bonding auxiliary agent is fed onto the first electrode of the board.

4. The semiconductor device mounting method according to claim 2, wherein

the first electrode of the board is formed from copper while the second electrode of the semiconductor device is formed from gold, and

in the ultrasonic bonding step, the first electrode and the second electrode are metal-joined in a state that the bonding auxiliary agent is present in the periphery of the bonding interface between the first electrode formed from copper and the second electrode formed from gold.

5. The semiconductor device mounting method according to claim 2, further comprising a bonding-auxiliary-agent removal step for removing the bonding auxiliary agent remaining between the board and the semiconductor device after the ultrasonic bonding step.

6. The semiconductor device mounting method according to claim 5, wherein in the bonding-auxiliary-agent removal step, the bonding auxiliary agent is removed by heating and vaporizing the bonding auxiliary agent remaining between the board and the semiconductor device.

7. The semiconductor device mounting method according to claim 2, further comprising an oxide removal step for removing oxide on at least either one of the first electrode or the second electrode whichever is formed from copper, before the bonding-auxiliary-agent feeding step.

8. The semiconductor device mounting method according to claim 2, wherein the bonding auxiliary agent has an OH group.

9. The semiconductor device mounting method according to claim 2, wherein the bonding auxiliary agent has a boiling point of 200°

C. or higher.

10. A method for manufacturing a semiconductor device mounted board, the method including:

the semiconductor device mounting method according to claim 2, and

a resin sealing step for sealing, with resin, areas including gaps between the board and the semiconductor device as well as bonding portions between the first electrodes and the second electrodes after the bonding-auxiliary-agent removal step.

11. A method for manufacturing a light-emitting device mounted board, the method including:

the semiconductor device mounting method according to the first aspect, wherein the semiconductor device of the second electrode is a light-emitting device;

a bonding-auxiliary-agent removal step for removing the bonding auxiliary agent remaining between the board and the light-emitting device; and

a resin sealing step for sealing, with light-transmitting resin, areas including gaps between the board and the light-emitting device as well as bonding portions between the first electrodes and the second electrodes, wherein

in the ultrasonic bonding step, the bonding interface between the first electrode and the second electrode keeps covered with the bonding auxiliary agent at least until the first electrode and the second electrode are metal-joined.

12. The method for manufacturing a light-emitting device mounted board according to claim 11, further comprising an oxide removal step for removing oxide on at least either one of the first electrode or the second electrode whichever is formed from copper, before the bonding-auxiliary-agent feeding step.

13. The method for manufacturing a light-emitting device mounted board according to claim 12, wherein

the first electrode of the board is formed from copper,

in the oxide removal step, oxide on the first electrode of the board is removed, and

in the bonding-auxiliary-agent feeding step, the bonding auxiliary agent is fed onto the first electrode of the board.

14. The method for manufacturing a light-emitting device mounted board according to claim 12, wherein

the first electrode of the board is formed from copper while the second electrode of the light-emitting device is formed from gold, and

in the ultrasonic bonding step, the first electrode and the second electrode are metal-joined in a state that a contact interface between the first electrode formed from copper and the second electrode formed from gold is covered with the bonding auxiliary agent.

15. The method for manufacturing a light-emitting device mounted board according to claim 12, wherein in the bonding-auxiliary-agent removal step, the bonding auxiliary agent is removed by heating and vaporizing the bonding auxiliary agent remaining between the board and the light-emitting device.

16. The method for manufacturing a light-emitting device mounted board according to claim 12, wherein the bonding auxiliary agent has an OH group.

17. The method for manufacturing a light-emitting device mounted board according to claim 12, wherein the bonding auxiliary agent has a boiling point of 200°

C. or higher.