POWER MOS DEVICE FABRICATION
First Claim
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1. A method of fabricating a semiconductor device, comprising:
- forming a mask on a substrate having a top substrate surface;
forming a gate trench in the substrate, through the mask;
depositing gate material in the gate trench;
removing the mask to leave a gate structure;
implanting a body region;
implanting a source region;
forming a source body contact trench having a trench wall and a trench bottom;
forming a plug in the source body contact trench, wherein the plug extends below a bottom of the body region; and
disposing conductive material in the source body contact trench, on top of the plug.
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Abstract
Fabricating a semiconductor device includes forming a mask on a substrate having a top substrate surface; forming a gate trench in the substrate, through the mask; depositing gate material in the gate trench; removing the mask to leave a gate structure; implanting a body region; implanting a source region; forming a source body contact trench having a trench wall and a trench bottom; forming a plug in the source body contact trench, wherein the plug extends below a bottom of the body region; and disposing conductive material in the source body contact trench, on top of the plug.
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Citations
19 Claims
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1. A method of fabricating a semiconductor device, comprising:
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forming a mask on a substrate having a top substrate surface; forming a gate trench in the substrate, through the mask; depositing gate material in the gate trench; removing the mask to leave a gate structure; implanting a body region; implanting a source region; forming a source body contact trench having a trench wall and a trench bottom; forming a plug in the source body contact trench, wherein the plug extends below a bottom of the body region; and disposing conductive material in the source body contact trench, on top of the plug. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification