NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME
First Claim
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1. A nitride semiconductor light-emitting device comprising:
- a first conductive-type nitride semiconductor layer;
a superlattice layer provided on said first conductive-type nitride semiconductor layer;
an active layer provided on said superlattice layer; and
a second conductive-type nitride semiconductor layer provided on said active layer, whereinan average carrier concentration of said superlattice layer is higher than an average carrier concentration of said active layer.
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Abstract
A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.
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Citations
21 Claims
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1. A nitride semiconductor light-emitting device comprising:
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a first conductive-type nitride semiconductor layer; a superlattice layer provided on said first conductive-type nitride semiconductor layer; an active layer provided on said superlattice layer; and a second conductive-type nitride semiconductor layer provided on said active layer, wherein an average carrier concentration of said superlattice layer is higher than an average carrier concentration of said active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification