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NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME

  • US 20130001509A1
  • Filed: 06/26/2012
  • Published: 01/03/2013
  • Est. Priority Date: 06/30/2011
  • Status: Active Grant
First Claim
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1. A nitride semiconductor light-emitting device comprising:

  • a first conductive-type nitride semiconductor layer;

    a superlattice layer provided on said first conductive-type nitride semiconductor layer;

    an active layer provided on said superlattice layer; and

    a second conductive-type nitride semiconductor layer provided on said active layer, whereinan average carrier concentration of said superlattice layer is higher than an average carrier concentration of said active layer.

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